948 LG Search Results

LGH1025

Abstract: a103 transistor 3E10 3E12
Contextual Info: Specification for Approval Version 1.0 Part No. : LGH1025 LGH1026 LGH1028 LGH1029 comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea

BD943

Contextual Info: BD943 BD945 BD947 _J \ _ SILICO N EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.

b0945

Abstract: bd947 BD944 BD945 BD943
Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA

948 LG DIODE

Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item

3708

Abstract: LFH1040 LWH1025 LWH1026 3050B LBH1026 LBH1025
Contextual Info: SGS Testing Korea Co., Ltd. #18-34, Sanbon-dong, Gunpo-city, Kyunggi-do, Korea 435-040 Tel : 031 428-5765~6, Fax: 031) 427-2374, InterNet>http://www.sgslab.co.kr Test Report No. F690101/LF-CTS031865 Date : November 18, 2004 Page 1 of 2 ` LUXPIA 948-1, Dunsan-Li, Bongdong-eup, Wanju-gun,

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

dual tv pover supply

Abstract: VI-J00 mini SD socket Q905
Contextual Info: P R O P R I E T A R Y DATA' EID REV This docunent and in fo r nation cnrrtDhEcI nay n o t be reprod uced , used o r d sd a s e d vithaw t p rio r w ritte n pernissian a F VESTCDR & Division o f VICDR Corporertlon. 948 ft NDTE: D E T A I L E D DESIGN GUIDE L I N E S ARE

Contextual Info: 20/|~ 2312 87>/9 4+;-2361 9/4+? 0C@OPMCN U KYl[`af_ j]dYq U 866B koal[`af_ [YhYZadalq U B[[gj\af_ lg BMRJ D 7847 /DYjjqaf_Y 76cBZ Rmal[`af_@ =cB h]Yc2 78cB QLR k`gjl [aj[mal [mjj]flX U Roal[`af_ hgo]j mh lg ;4:cUB U :cU \a]d][lja[ klj]f_l` /Z]lo]]f [gad Yf\ [gflY[lk0

GMKD

Abstract: 948 LG kgmd 78VA UBD58
Contextual Info: 20/|~ 2312 87>/9 4+;-2361 9/4+? 0C@OPMCN U KYl[`af_ j]dYq U 866B koal[`af_ [YhYZadalq U B[[gj\af_ lg BMRJ D 7847 /DYjjqaf_Y 76cBZ Rmal[`af_@ =cB h]Yc2 78cB QLR k`gjl [aj[mal [mjj]flX U Roal[`af_ hgo]j mh lg ;4:cUB U :cU \a]d][lja[ klj]f_l` /Z]lo]]f [gad Yf\ [gflY[lk0

BD944

Abstract: BD946 BD943 BD948 LE17
Contextual Info: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103&#39;CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing

Contextual Info: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview RG RD OD VO LG H2 H1 OG GND PW 1 2 3 4 5 20 19 18 17 16 6 7 8 9 10 15 14 13 12 11 Part Number CCD size MW39540AE 11 mm (type-2/3) V7 V8 V1 V2

Contextual Info: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

b0948

Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Contextual Info: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A

Contextual Info: Apr. 1998 T1M 3742-45SL-341 1. RF PERFORMANCE SPECIFICATIONS Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB PldB Compression Point VDS= 10V GldS f=3.3-3.6QHz Power Gain at 1dB Compression Point los Drain Current Power Added Efficiency Tiadd

PHL 947

Abstract: 74F3040
Contextual Info: P h ilip s S e m ic o n d u c to r s - S lg n e ttc s Document No. 853-0023 ECN No. 98639 Date of issue January 29, 1990 Status Product FAST 74F3040 30Q Une Driver Dual 4-Input NAND 30Q Line Driver FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT

Contextual Info: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —

YC 746

Abstract: LM 746 kyp4 GFK 77 GFK 32 leh4 KYC u4
Contextual Info: .,9{x- }873137/9+ 5+0}; ,@=KLI@J T 9;A koal[`af_ [YhYZadalq T AeZa]fl l]eh4@ jYf_] mh lg 78; T 7 Fgje A / 7 Fgje C [gflY[l YjjYf_]e]fl T NdYkla[ k]Yd]\ Yf\ \mkl hjgl][l]\ lqh]k YnYadYZd] 7OHC>=D }HHDC>=KCGFJ T PgHQ / EJT [gehdaYfl H]Yl]jk 0k]Yl2 ^jgfl5j]Yj oaf\gok12 FYf eglgjk [gfljgd2

MW39540AE

Abstract: transistor horizontal section tv
Contextual Info: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000

ccd sensor 22 pin diagram

Abstract: ccd diode 122t MN5280 CF25L 948 LG DIODE V6 OD CCD 16 pin ceramic chip 5318T ccd sensor 16 pin diagram
Contextual Info: CCD Area Image Sensor MW37381AE 11mm type-2/3 Wide CCD Area Image Sensor • Overview The MW37381AE is a 11mm (type-2/3) interline transfer CCD (IT-CCD) solid state image sensor devices. This device uses photodiodes in the optoelectric conversion section and CCDs for signal read out. The electronic

MW39540AE

Abstract: WDIP020-G-0600D transistor horizontal section tv
Contextual Info: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000

948 LG DIODE

Contextual Info: 2SK2423 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • High speed sw itching • Low drive current • N o Secondary B reakdow n • Suitable for S w itching regulator, D C-D C converter. Outline

MW39540AE

Contextual Info: CCD Area Image Sensor MW39540AE Diagonal 11 mm type-2/3 IT CCD Area Image Sensor • Pin Assignments ■ Overview M Di ain sc te on na tin nc ue e/ d The MW39540AE is a type-2/3 520k-pixel CCD solid state image sensor. This device uses photodiodes in the opto-electric conversion section and CCDs for signal read-out. The electronic shutter function allows for an exposure time of 1/10 000

Contextual Info: HAT1033T Silicon P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-532E 6th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline T S S O P -8 1 5 8 D D D ? S S S S

transistor f 948

Abstract: MPS6567 transistor a 949 u407
Contextual Info: MPS6567 SILICON NPN SILICON AMPLIFIER/MIXER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for use in high-frequency am plifier and m ixer ap­ plications. • High Collector-Em itter Breakdown Voltage — B V c E O = 40 V dc (Min) @ 1q = 1.0 mAdc