900V 2.2A Search Results

88 diode

Contextual Info: SSFP2N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 2.2A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

stk029

Contextual Info: STK0290F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=3.8F(Typ.) Low gate charge : Qg=13.1nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information Type NO.

Contextual Info: STK0290F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=3.8F(Typ.) Low gate charge : Qg=13.1nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information Type NO.

stk029

Abstract: STK0290P
Contextual Info: Preliminary STK0290P Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=900V Min. Low Crss : Crss=5.0F(Typ.) Low gate charge : Qg=18.2nC(Typ.) Low RDS(on) :RDS(on)=7.2Ω(Max.) Ordering Information

irfbf30

Abstract: Diode IOR 10 dc
Contextual Info: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

2N90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

2n90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

2N90

Abstract: 900v 2.2a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

IRFPF30

Contextual Info: International S Rectifier PD-9.618A IRFPF30 HEXFET P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 900V R DS on = 3 -7 Q

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and

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TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SK3727

Abstract: power mosfet 600v
Contextual Info: 2SK3727-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

IRFB

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBF30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

HE581

Contextual Info: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 YEAR W ARRANTY This series of off-line switching power modules provides 25

HE581

Abstract: HE500
Contextual Info: HE300 and HE500 SERIES Single output Recommended for new design-ins • • • • • • This series of off-line switching power modules provides 25 Watts of output power at 5, 12 or 15VDC. The HE300 and HE500 series both incorporate a pulse width modulated flyback circuit. Both series operate at over 25kHz and

HE583

Abstract: HE381 HE300 HE500 HE581 HE584 HE383
Contextual Info: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 V E A R This series of off-line switching power modules provides 25

HE581

Abstract: HE300 HE500 HE583 HE584
Contextual Info: HE300 and HE500 SERIES Single output Recommended for new deslgn-lns • ■ ■ ■ ■ ■ 60 to 75% efficiency Excellent regulation OVP on 5V output 115VAC input Short circuit protection Internal input filter 2 V E A R This series of off-line switching power modules provides 25

Contextual Info: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

HE581

Contextual Info: HE300 and HE500 SERIES Single output R e c o m m e n d e d fo r n e w d e s lg n -ln s 60 to 75% efficiency E xcellent regulation O V P on 5V o utput 115VAC input Short circuit protection Internal Input filter 2 YEA R W ARRAN TY This serie s of off-line s w itching po w e r m o dules pro v id e s 25

Contextual Info: AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with