90 M 20 B Search Results

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

Contextual Info: 1. M echanical: 2. S c h e m a tic : 2.50 2.50 12.3 0 ± 0 .5 0 o <N in d 002N 6d0— 90 mmaa 01 o 4.50 CD samx O — — Csi 3. ELECTRICAL SPECIFICATIONS: @25°C 3.50 3.50 - - OCL: 0.90uH±20% 100KHz, 0.10V, 0DC CURRENT: 20 ADC Max, OCL DROP BY 25% Max

28M30

Contextual Info: S 系列拉压式传感器 L B H h M 100kg 80 32 80 16.8 M16 200kg 80 32 80 16 M16 300kg 94 40 90 21 M16 500kg 94 40 90 20 M16 70 100 35(42) 88(95) 19 M16 1t 2t 70 35 88 19 M20 3t 94 42 110 25 M24 5t 105 50 134 28 M30 10t 132 60 144 33 M36 20t 170 70 192

Contextual Info: SwitchmodePower Features Flatwire Inductors: GBI-4020 Series • • • • • • Part Number GBI-4020-900R GBI-4020-121R GBI-4020-151R GBI-4020-221R GBI-4020-351R Inductance nH DCR Max. mΩ Note1 (@ 20°C) Lsat nH Isat ADC (Note2) 90 125 150 220 350

M208

Contextual Info: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide

6116 ram 2k

Abstract: IDT6116LA IDT6116SA SO24-2 idt6116s
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: Types 32M/33M SPECIFICATIONS FEATURES W rap and fill construction. DIELECTRIC WITHSTANDING VOLTAGE Tubular or oval configuration for optimum space savings. 200% of rated voltage applied through a minimum limiting resistance of 100 O hm s/Volt. Duration of voltage stress shall be 15 seconds

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

1n5819 MINIMELF PACKAGE

Contextual Info: TA IW AN LI TO N E L E C T R O N I C M'lE D • S S B S L R S 0 Q Q M 0 S 3 TflQ ■ TLIT |MiEt SCHOTTKY BARRIER RECTIFIERS Effi ^ P 0 3 -1 5 OPERATING/STORAGE TEMPERATURE RANGE TYPE -65°C to +150°C Maximum Peak Reverse Voltage Maximum Average Rectified Current

ST-40

Contextual Info: Data Sheet SML-51 Series 1608（0603） 1.6x0.8mm（t=0.55mm） Features ・Original device technology enables high brightness and high reliability Color Type ・High reliability due to the wide operation temperature -40℃ to +100℃ (SML-512(A) Series)

Contextual Info: — AMD£I Am29LV004T/Am29LV004B Data Sheet INTRODUCTION DOCUMENT ORGANIZATION T h is a m e n d m e n t s u p e rs e d e s in fo rm a tio n in th e Am 29LV004 d ata sheet, PID 205 1 OC. Table 1 lists the data book pages affected by this d o c­ u m e n t and c o n ta in s a d e s c rip tio n of c h a n g e s. The

WT14-2P411

Abstract: WT14-2P432 WT14-2P422 WT14-2N422 2P111 WT14 WT14-2N122 WT14-2P122 N432 P122
Contextual Info: KD01_W14_2_en.qxd 19.07.2006 13:28 Uhr Seite 728 W 14-2 Photoelectric switches Photoelectric proximity switch BGB Photoelectric proximity switch energetic W 14-2: Economic Solution for Standard Applications Photoelectric reflex switch Teach-in function as well as the

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

Contextual Info: AMENDM ENT A M D £I Am29LV400T/Am29LV400B Data Sheet INTRODUCTION DOCUMENT ORGANIZATION T h is a m e n d m e n t s u p e rs e d e s in fo rm a tio n in th e A m 29LV400 d ata sheet, PID 205 1 4B. T able 1 lis ts th e d a ta b o o k p a g e s a ffe c te d by th is

BD 4913

Abstract: PKB 4713 PINBLA
Contextual Info: Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EZHIXZH SEC/S Kevin Zhou Approved PKB 4000 SEC/S SEC/D Kevin (Julia series You) Zhou 1 (2) (3) No. 1/1301-BMR 00152-EN/LZT146394 636Technical Uen Specification

Contextual Info: M IC 29150/29300/29500/29750 MIC29150/29300/29500/29750 Series s S* High-Current Low-Dropout Regulators General Description Features The MIC29150/29300/29500/29750 are high current, high accuracy, low-dropout voltage regulators. Using Micrel's proprietary Super Beta PNP process with a PNP pass

Contextual Info: J B n EL EC T R O N I C S INC SDE D 4ÛT4D7S 00 0 0 0 7 0 10% 20 30 40 50 60 70 60 90 % Total L-87- SERIES 10 Tap Delay Line Hermetic Sealed IJBM b04 L-31-800 SERIES* 10 Tap Active Epoxy Encapsulated Vex: fo I Input G nd (7 . * * See DESC Listing pg. 28

DO-35G

Contextual Info: Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode List List. 1 Package outline. 2 Features. 2

BPW40

Abstract: bpw 50 NJU7029 NJU7009V
Contextual Info: NJU7029 Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier • GENERAL DESCRIPTION The NJU7029 is a CMOS operational amplifier that feature low noise as VNI=13V/√Hz typ. @f=1kHz, low operating voltage. FET input devices provide very low input bias current and

ba qu

Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

60598-1

Abstract: ST30 ST303 ST303C DRM100
Contextual Info: Bulletin I25186 rev. B 04/00 ST303C.L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC B-PUK 515A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt

S30RW3FF200

Abstract: S303E S30AW3R S30RW3R s30 amp S30FF
Contextual Info: S30 Sensors – ac-Voltage Series Self-contained ac-operated sensors Features • Featuring EZ-BEAM technology, the specially designed optics and electronics provide reliable sensing without the need for adjustments • 30 mm plastic threaded barrel sensor in opposed, retroreflective or fixed-field

MAL2102

Abstract: 85222E3 technical 164 46105E3 78473 43333E3 68153 13103E 87332E3
Contextual Info: 101/102 PHR-ST www.vishay.com Vishay BCcomponents Aluminum Capacitors, Power High Ripple Current, Screw Terminals FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, cylindrical aluminum case, insulated with a blue sleeve