858AW Search Results

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

BC856BW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856AW, BW TRANSISTOR BC857AW, BW,CW 858AW, BW,CW PNP SOT-323 1. BASE FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications

H12E

Abstract: VSO05561 marking 3GS 858W
Contextual Info: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2

transistor for 3G

Abstract: 3b transistor 3F TRANSISTOR transistor pnp STO-323 857AW bc857-cw Transistor BW BC856BW
Contextual Info: BC856AW,BW BC857AW,BW,CW 858AW,BW,CW STO-323 Transistor PNP 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features — Ideally suited for automatic insertion For Switching and AF Amplifier Applications — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

BC860W

Contextual Info: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case

BC856AW

Abstract: BC858A BC856BW BC856 BC857 BC857AW BC857BW BC857CW BC858 BC858AW
Contextual Info: BC856AW, BW BC857AW, BW, CW 858AW, BW, CW Elektronische Bauelemente RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 * Operating Temp. : -55 C ~ +150 C O O A L C OLLE C TOR 3 3

Contextual Info: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 1±0.1 Power dissipation – Verlustleistung 200 mW Plastic case

BC transistor series

Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
Contextual Info: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

C857

Abstract: c858 C857B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1 ,BWT1 BC857AWT1 ,BWT1 858AWT1 ,BWT1, CWT1 PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SO T -32 3/SC -7 0 which is

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

BC856BW

Abstract: BC856AW BC856W BC857AW BC857BW BC857CW BC857W BC858AW BC858BW BC858W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856AW,BW TRANSISTOR BC857AW, BW CW 858AW, BW CW PNP SOT-323 1. BASE FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications

transistor 102

Contextual Info: Small Signal Transistor BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage