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IXYS Corporation


IXYS Corporation IXFT80N085 MOSFETs MOSFET, INTR DIODE 85V, 80A
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Mouser Electronics	IXFT80N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFR180N085 MOSFETs 180 Amps 85V 0.007 Rds
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Mouser Electronics	IXFR180N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFX180N085 MOSFETs 180 Amps 85V 0.007 Rds
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Mouser Electronics	IXFX180N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFN280N085 MOSFET Modules 280 Amps 85V 0.0044 Rds
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Mouser Electronics	IXFN280N085					1 - 10 - 100 - 1000 - 10000 -	Get Quote

80N085 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N085 Contextual Info: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80n085 isoplus220tm 405b2	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	80n085 o-247 o-268	PDF
Contextual Info: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80n085 isoplus220tm 405b2	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	80n085 o-268	PDF
80N085 Abstract: IXFH80N085 80N08 Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	80n085 o-247 ixfh80n085 80n08	PDF
80N08 Abstract: 80N085 4800 mosfet Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 11 mΩ Ω Ω 80 A 11 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	isoplus220tm 80n08 80n085 728b1 +3123b1 065b1 4800 mosfet	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V ID25 = 80 A RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	80n085 o-247 o-268 o-268aa	PDF
80N08 Abstract: 80N085 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	isoplus220tm 80n08 80n085 728b1 +2123b1 065b1	PDF
80N08 Abstract: 80N085 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	isoplus220tm 80n08 80n085 728b1 +2123b1 065b1	PDF
80N085 Abstract: 80N08 4800 mosfet mosfet 4800 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	isoplus220tm 80n08 80n085 220tm +24800 mosfet mosfet 4800	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	o-247 plus247 isoplus247tm o-204 +15o-268 o-264 76n06-11 76n06-12 80n06 180n06 c1162 c1280 26n60 60n25 c1328 120n20 c1146 c1104 c1158	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	o-247 plus247 isoplus247tm o-204 +16o-268 o-264 76n06-11 76n06-12 80n06 180n06 c1146 c1162 c1278 c1106 c1156 ixfh 60n60 c1142 c1238 c1104 ixfn 26n60	PDF