7C263 Search Results

C2613

Abstract: C2614 c2615 C2611 C2617 7C261 7C264 CY7C261 CY7C263 CY7C264
Contextual Info: CY7C261 7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description The CY7C261, 7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

QP7C261-25LI

Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Contextual Info: QP7C261 / 7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed

Contextual Info: pypppqc ' CY7C261 7C263/CY7C264 — 8192 x 8 PROM Power Switched and Reprogrammable SEMICONDUCTOR Features • C M O S for optimum speed/pow er • Direct replacement for bipolar PROM s • Windowed for reprogrammability • Capable o f withstanding > 2000V

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

5962-9080307MJA

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Update drawing to reflect current requirements. Editorial changes throughout. gap 01-02-15 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A

Contextual Info: CY7C261 7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features the CY7C261 automatically powers down into a low-power standby mode. It is packaged in a 300-mil-wide package. The 7C263 and CY7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down

Contextual Info: SCD#QM5323 Source Control Drawing Upscreening/Manufacturing Specification P/N FT7C261-55WMB-CY Title Page . List of Effective Pages .

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

smd code ND

Abstract: 7c263 L43 SMD
Contextual Info: CY7C261 7C263/CY7C264 CYPRESS SEMICONDUCTOR • TTL-compatlble I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power • Windowed Tor reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

p20d

Abstract: CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H
Contextual Info: Qualification Report March, 1992 QTP 91296 Version 1.0 64K EPROM FAMILY, 0.8µ MARKETING PART NUMBER DEVICE DESCRIPTION CY7C261 8K x 8 POWER-SWITCHED 7C263 8K x 8 CY7C264 8K x 8 600-MIL PKG CY7C266 8K x 8 POWER-SWITCHED EPROM PINOUT CY7C269 8K x 8 REGISTERED DIAGNOSTIC

Contextual Info: CY7C261 7C263/CY7C264 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power (7C261)

AT25080N-10SA-2.7C

Contextual Info: CY7C261 7C263/CY7C264 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (m ilitai?) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power (7C261)

QP7C261

Abstract: QP7C261-55WMB QP7C261-25WMB QP7C264 QP7C263 QP7C261-25WMB package 7C261 QP7C263-20JC QP7C261-35QMB GDFP2-F24
Contextual Info: QP7C261 / 7C263 / QP7C264 October 9, 2007 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available

AU- 3JS

Abstract: C2682 333Q CY7C269 7c269 7C268 7C269-IS
Contextual Info: HbE D H E ä ö ^ b b S OOObflQÖ □ Q C Y P CY7C268 CY7C269 CYPRESS SEMICONDUCTOR 8192 x 8 Registered Diagnostic PROM Features Functional Description • CMOS for optimum speed/power • Highspeed — 15-ns max set-up —•12-ns clock to output • Low power

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

2M X 32 Bits 72-Pin Flash SO-DIMM

Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
Contextual Info: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194

Contextual Info: CY7C261 7C263/CY7C264 r^yppircc SEMICONDUCTOR Features TTL-compatible I/O • D irect replacement for bipolar PROMs • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — 20 ns comm ercial — 25 ns (military)

Contextual Info: PROM Programming Information SEMICONDUCTOR Introduction w ith th e c o n tro l gate. T h e sta te o f th e floating gate, c h arg ed o r u n c h arg ed , is p e rm a n e n t because th e gate is isolated in an ex trem ely p u re oxide. T h e c h arg e m ay be