7C191 Search Results

Contextual Info: 7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

Contextual Info: 7C191 CY7C192 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 12 ns • Transparent write 7C191 • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

Contextual Info: 7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power

Contextual Info: 7C191 CY7C192 CYPRESS SEMICONDUCTOR Features 65,536 x 4 Static R/W RAM Separate I/O • Capable of withstanding greater than 2001V electrostatic discharge • Automatic power-down when deselected • Transparent write 7C191 D ata on the four input pins (I0 through Ij) is

7C192-12

Abstract: 7C192-15 7C192-20 CY7C191 CY7C192
Contextual Info: bSE SEMICONDUCTOR » SSfl'ibhE OOIOGIE 243 M C Y P 7C191 CY7C192 PRELIMINARY r^ y p p rc q = SEMICONDUCTOR 64K x 4 Static RAM with Separate I/O Features Functional Description • H ighspeed — 1 2 ns • T ransparent write 7C191 • CMOS for optim um speed/power

Contextual Info: 7C191 CY7C192 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 1 2 ns • T ransparent write 7C191 • CMOS for optim um speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

7C192-12

Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P 7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power

7C192-12

Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: 7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he 7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­

c1918

Abstract: C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914
Contextual Info: 1CY 7C19 2 7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected.

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

9235P

Abstract: 9135p
Contextual Info: C Y 7 C 1 9 1 p yp: v « *1 X X C Y 7 C 1 9 2 - 64K x 4 Static RAM with Separate I/O Easy m em ory expansion is provided by active LO W chip e n ­ able UE and th re e -sta te drivers. T hey have an a u to m a tic po w e r-d ow n fea tu re, reducing th e pow er con sum p tion by 75%

Contextual Info: CYPRESS CY7C192 64K x 4 Static RAM with Separate I/O pansion is provided by active LOW Chip Enable CE and three-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. Features • High speed — 12 ns

7C192-12

Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: 7C191 CY7C192 if CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 12 ns • Transparent write 7C191 • CMOS for optimum speed/power • Low active power T he 7C191 and CY7C192 are highperform ance CM OS static RAM s orga­

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

C1918

Abstract: C1915 I0-I13 CY7C192 CY7C192-12PC 7C192-12 7C192-15 7C192-20 C191 CY7C192-25PC
Contextual Info: CY7C192 64K x 4 Static RAM with Separate I/O Features pansion is provided by active LOW Chip Enable CE and three-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns • CMOS for optimum speed/power

Hitachi 32k static RAM

Abstract: CY7C192 CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99011 VERSION 1.0 April, 1999 256K Static RAM, R28 Technology, Fab 2 7C191/192 64K x 4 Static RAM With Separate I/O CY7C194/195/196 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C199 32K x 9 Static RAM

7C191

Contextual Info: 7C191 CY7C192 CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 1 2 ns The 7C191 and CY7C192 are highperform ance CM O S static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy memory expansion i s provided by ac­

Contextual Info: 7C191 CY7C192 V CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 12 ns T he 7C191 and CY7C192 are highperform ance CM O S static RA M s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­

Contextual Info: 7C191 CY7C192 f ' 1Y P P T 7 C C SEMICONDUCTOR F eatures • Automatic power-down when deselected • Transparent write 7C19I • CMOS for optimum speed/power • High speed — U a = 2 s ns • Low active power — 660 mW • Low standby power — 193 mW

C1915

Abstract: CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919
Contextual Info: 7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

Contextual Info: FEB 2>6 »992 Data Sheet January 1992 7C191 ATT7C192 ^ A T& T Microelectronics High-Speed CMOS SRAM 256 Kbit 64K x 4 , Separate I/O Features • High speed — 12 ns maximum access times ■ Transparent write (7C191) or highimpedance write (ATT7C192)

c1918

Abstract: 7C192-15 7C192-20 C191 CY7C191 CY7C192 CY7C192-25PC C1919 C1917
Contextual Info: 7C191 CY7C192 Features D D D D D D D Functional Description The 7C191 and CY7C192 are highĆ performance CMOS static RAMs orgaĆ nized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by acĆ tive LOW chip enable CE and threeĆ