750UM Search Results
750UM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2.4GHz amplifier schematic
Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
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eb750sot89bgfpd750sot89100ma30mil+3 | |
2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
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f2002f2003f20042sc3355 spice model+9 | |
LM3495
Abstract: MTC16 TSSOP-16
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lm3495200khztssop-16ds201699-06-jp+1 | |
STMICRO top-side marking
Abstract: marking code nt amplifier Utah speaker TS4851 TS4851EIJT TS4851IJT TS485IJT TSDC02IJT STmicro marking
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ts4851160mw20khz32-step+10 | |
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Contextual Info: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection; |
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2sb075030mljl | |
variable capacitor
Abstract: XC2311 Mark 6c
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xc2311etr140850mhzot-26+2 | |
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Contextual Info: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their |
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micfound-060514 | |
ic MIP 411
Abstract: MIP 411
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ts495632-stepic mip 411mip 411 | |
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Contextual Info: Advance Product Information November 18, 2003 Ka-Band Power Amplifier TGA4517-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Idq = 2 A • Point-to-Point Radio • Military Radar Systems |
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tga4517-epu | |
ic MIP 411
Abstract: MIP 411 TS494 TS4956EIJT TS4956 1N4148 BS170 KP1040 1n4148-1c
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ts495632-stepic mip 411mip 411+6 | |
Spansion good dieContextual Info: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT Distinctive Characteristics Architecture Advantages — Program/Erase: 50 mA max — Standby mode: CMOS: 150 µA max |
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s29cd016g16-megabit32-bitspansion good die | |
ka band power amplifier
Abstract: TGA4517 ka band power mmic
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tga451735dbm37ghzka band power amplifier+1 | |
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Contextual Info: XC2311 Series ETR1408_005 VCXO ICs with Built-in Variable Capacitor •GENERAL DESCRIPTION The XC2311 Series is VCXO Voltage Controlled Crystal Oscillator ICs with built-in variable capacitor diode. With the originally developed variable capacitor diode and a constant-voltage circuit built-in, the series achieves the wide |
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xc2311etr140850mhzot-26 | |
TGA4517-EPUContextual Info: Advance Product Information June 4, 2004 Ka-Band Power Amplifier TGA4517-EPU Key Features S-Parameter dB • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat 15 dB Nominal Gain 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology |
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tga4517-epu | |
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TGA4517Contextual Info: Advance Product Information February 10, 2006 Ka-Band Power Amplifier TGA4517 Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent |
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tga451735dbm37ghz | |
F1-9229-ST
Abstract: F1-9229-CH dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830
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OCR Scan |
250ym450pm650yrn_20jjm+13 | |
FPD750SOT89Contextual Info: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively |
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eb750sot89bbfpd750sot8934dbm10dbm+3 | |
ro4003
Abstract: 802.11a Amplifier roger rogers FPD750SOT89
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eb750sot89ajfpd750sot8924dbm-46dbc+9 | |
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Contextual Info: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm |
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tga451735dbm37ghz | |
12V 10A BJT
Abstract: DC switching 60V 10A FET 99mV LM3495 MTC16 TSSOP-16 500fet power n fet 22VIO
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lm3495200khztssop-16ds201699-06-jp+7 | |
rockwell powerflex 753 wiring diagram
Abstract: powerflex 753 programming manual 20-750-2262D-2R 20-750-2262c-2r 20-750-ENC-1 powerflex 753 20-750-APS Universal Feedback Board 20-750-UFB-1 Allen-Bradley 20-750-enc-1 powerflex 753 connection diagram
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750-series750-td001b-en-p750-td001a-en-prockwell powerflex 753 wiring diagram+9 | |
transistor 6c x
Abstract: XC2311 750um Mark 6c
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16mhz50mhz27mhzot-26+4 | |
spansion am29f top marking
Abstract: spansion top marking am29lv JC42 MBM29F S29CD016G S29CD-G 75281 170-nm spansion am29f part marking
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s29cd016g16-megabit32-bitspansion am29f top marking+7 | |
TS2007
Abstract: TS4999 rpvcc 3D 6 kv ceramic capacitor
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ts499918-bumpts2007rpvcc+1 | |