TGA4517 Search Results
TGA4517 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TGA4517 | TriQuint Semiconductor | Ka-Band Power Amplifier | Original | 130.29KB | 10 | ||
| TGA4517 | TriQuint Semiconductor | Ka-Band Power Amplifier | Original | 398.65KB | 11 | ||
| TGA4517-EPU | TriQuint Semiconductor | Amplifier, Ka-Band Power Amplifier | Original | 135.15KB | 10 |
TGA4517 Price and Stock
TriQuint Semiconductor TGA4517RF Amp Single Power Amp 37GHz 6.5V 18-Pin Die |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TGA4517 | 1 |
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TGA4517 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Product Information November 18, 2003 Ka-Band Power Amplifier TGA4517-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Idq = 2 A • Point-to-Point Radio • Military Radar Systems |
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tga4517-epu | |
ka band power amplifier
Abstract: TGA4517 ka band power mmic
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tga451735dbm37ghzka band power amplifier+1 | |
TGA4517-EPUContextual Info: Advance Product Information June 4, 2004 Ka-Band Power Amplifier TGA4517-EPU Key Features S-Parameter dB • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat 15 dB Nominal Gain 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology |
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tga4517-epu | |
TGA4517Contextual Info: Advance Product Information February 10, 2006 Ka-Band Power Amplifier TGA4517 Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent |
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tga451735dbm37ghz | |
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Contextual Info: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm |
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tga451735dbm37ghz | |
TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
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cus937tga2517tqp6m9002tqm653029+7 | |
TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
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asareavailableforkeybandsacrossdcto100ghzalldevicesare10011ghzcut-offfreqtgc1430f-epu+15 | |
TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
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tga2517tqp6m9002tqm7m5013tga4943-sl+6 | |
TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
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tg2h214220-fltga2572tga2573lte transceiver+6 | |
TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
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tga2517tga2540-fltga2573tqm7m5013+6 | |
Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
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mil-std-883 wire bond pull method 2011mil-std-883 method 2010phemt transistorrf mesfet s parameters+6 |