74T MARKING Search Results

Contextual Info: SIEMENS PZT 3904 NPN Silicon Switching Transistor • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904

Contextual Info: SIEMENS B A S 140W Silicon Schottky Diode • • • • General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type BAS 140W Pin Configuration Ordering Code tape and reel 1 2 Q62702-A1071 A C

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic

BFS17W

Abstract: MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic

A6 SOD-323 MARK

Abstract: SMD sot23 marking E6 E3 SOD-323 MARK MiniMELF SMD Footprint DO-213AA SMZC36 MARKING zeners SOT-23 sod-323 Marking ZK BKC Semiconductors Scans-00155596
Contextual Info: SOD 323 Plastic SMD 0.2 Watt Zener Diodes SMZC2,0 thru Use Advantages SMZC36 This family is similar to the European PRO-Electron types, The specifications re |§ $ similar low zener test currents oyer v f|a p e ranges. Used where low cost and high density are needed, as in portable systems.

PMBF5484

Abstract: IEC134 PMBF5485 PMBF5486 URC169
Contextual Info: Philips Semiconductors • bbSBTBl D02HQ41 0T3 HIAPX AMER P H ILI PS/ DIS CR ETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections VDs drain-source voltage

marking CODE M92

Contextual Info: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

Contextual Info: DIE PRODUCTS BURR-BROW N* [ INA110 DIE 1 Fast-Settling FET-lnput Very-High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES APPLICATIONS • • • • • FAST SCANNING RATE MULTIPLEXED INPUT DATA ACQUISITION SYSTEM AMPLIFIER • FAST DIFFERENTIAL PULSE AMPLIFIER

T16xxxH

Contextual Info: r z 7 SCS-THOMSON ^ 7 # lüülOG l® IILIIEÎIË!®®]DOS T 1 6 XXXH STANDARD TRIACS FEATURES • It rms = 16A . V Drm = 400V to 800V ■ High surge current capability DESCRIPTION T0220 non-insulated (Plastic) The T16xxxH series of triacs uses a high

TEA 1041

Contextual Info: .100" x .100" Latch/Ejector Header Straight, 4 Wall Optional ejector latches Mounting holes for securing header to board Shrouded to prevent against physical and chemical pin damage Solder tail and wrap tail options TS-0159-09 S heet 1 of 4 Physical Insulation

diode marking code YF

Abstract: BF992 bf992 m92
Contextual Info: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

IRFZ44NS

Contextual Info: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

4445a

Abstract: AT-41411 AT-41411-BLK AT-41411-TR1 transistor 41 74t 74t marking
Contextual Info: * W hat H E W L E T T mL/im P A C K A R D Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 F eatu res to-em itter pitch enables this tran sisto r to be used in m any different functions. The 14 em itter finger interdigitated geom etry

738P

Contextual Info: TSSE Gas filled thermometer with contacts Main Features „„ For corrosive gasses and liquids „„ Class 1 according to EN 13190 „„ Wetted parts and case material stainless steel „„ Mechanical or inductive contacts „„ Option : case material 1.4404 316L for aggressive atmosphere

Contextual Info: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

mb8316200

Abstract: MB8316200B mb83 B8316200B
Contextual Info: FUJITSU January 1994 Edition 1.0 DATA SHEET MB8316200B CMOS 16M-BIT MASK READ ONLY MEMORY 1 M x 16 2M X 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB8316200B is a CMOS Si-gat mask-programmable static read only memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits.

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: TSFE Gas filled thermometer with capillary and contacts Main Features „„ For corrosive gasses and liquids „„ Class 1 according to EN 13190 „„ Capillary 0.5 to 30 m „„ Mechanical or inductive contacts „„ Wetted parts and case material stainless steel

2SC4570

Abstract: xy 801 ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

Contextual Info: Triple 10-bit Video D/A Converter Video Product Family TMC3003 Triple Video D/A Converter Raytheon Preliminary Information F e a tu re s 10 bit, 80 Msps The TMC3003 is a high-speed triple 10-bit D/A converter especially suited for video and graphics applications. It offers 10-bit resolution,

DUP1

Contextual Info: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i