74698 Search Results

74257

Abstract: 74698 74175 74697 004-AA SAX 34
Contextual Info: - 74698 303 - BCD Synchronous Up/Down Counters 3STATI OUTPUTS VCC OUTPUT Qa LOAD Jl 1_ «co o* OUTPUT CONTROL H/C G ELECT .1- Q_-1 _1 Oa oc Oo IN « 0 UP< COUNTER » OOWK CLOCK « C D > 7 4 I 6 8 i / j i i 7 4 1 6 9 i l 7 ' * * ll M tw— l t CpSwTnF WfCIST CNO

29F002

Abstract: A1317 AS29F002B-120SC
Contextual Info: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)

TAA 621

Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Contextual Info: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption

1702 eprom programmer

Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
Contextual Info: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current

7C34098-20

Abstract: AS7C34098 AS7C4098
Contextual Info: High Performance 256Kx16 CMOS SRAM AS7C4098 AS7C34098 256K×16 CMOS SRAM Preliminary information Features • Organization: 262,144 words × 16 bits • High speed - 15/20/25/35 ns address access time - 8/10/12/15 ns output enable access time • Low power consumption

AS7C3512-15PC

Abstract: AS7C3512-25PC AS7C3512-12JC AS7C3512-12PC alliance promotion 60465
Contextual Info: High Performance 64Kx8 3.3V CMOS SRAM AS7C3512 AS7C3512L Low voltage 64K×8 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

AA 12025

Abstract: Z0 607 MN 64K32 J-Squared Technologies
Contextual Info: High Performance 64Kx32 CMOS SRAM AS7C36432 64K×32 Synchronous burst SRAM Preliminary information Features • Organization: 65,536 words × 32 bits • Fully synchronous pipelined operation • Flow-through option • Fast clocking speed: 100/75/66 MHz

MD 202

Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Contextual Info: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption

29f400

Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
Contextual Info: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current

houston tech

Abstract: pelco Taiwan Oasis Enterprise Co., LTD 221212 datasheet and application 7217 eprom UV eraser NEXUS FLASH ERASE oasis taiwan oasis SST superflash
Contextual Info: SST’s MTP Products A Superior Alternative to EPROM and Low Functionality Flash Application Note 1.0 Introduction MTP is a Many-Time Programmable low cost flash memory. The MTP combines the electrical erasability of flash and the cost effectiveness of EPROM. SST designed the MTP products, a low cost NVM, by reducing

Contextual Info: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors

QFP 87c51

Abstract: intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 SST89C54 SST89C58
Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART

74168

Abstract: 74169 74699 counter 74168 74257 MAX3039 74175 16-IF
Contextual Info: 304 — Binary Synchronous Up/Dow n Counters 74699 3STATE OUTPUTS »CC w i r v i 1 <JA ug L - J- QC UD • lu * u buniNUL H IIC 1 OO ENA i lLOADl C A * DC n in in in in in in in in iriiif OAT* INPUTS ■74168 .$ ¡¿7 4 1 6 9 1 7 'I ' ENABLE M M T IR RECIST GNO

AS7C256

Abstract: 256x128x8 TI 344C
Contextual Info: High Performance 32Kx8 CMOS SRAM II ^ L lh . AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs - 10/12/15/20/25/35 ns address access time

AS7C1028-25PC

Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Contextual Info: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle

AS7C33232-15QC

Abstract: datasheet CI 556 ats 2300 intel 8282 AS7C33232-15TQC nt 407 f AS7C33232 MO-108 NT 407 F transistor
Contextual Info: High Performance 32Kx32 CMOS SRAM AS7C33232 AS7C33232F 32K×32 Synchronous burst SRAM Features • Organization: 32,768 words × 32 bits • Fully synchronous pipelined operation • Flow-through option F version • Fast clocking speed: 100/75/66/60 MHz

datasheet 29f200

Abstract: 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T
Contextual Info: High Performance 256Kx8/128×16 5V CMOS Flash EEPROM AS29F200 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 or 128K×16 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors

74169

Abstract: 74257 74175 74697 74699 74698 AA11H u 74 hct 74 74696 jrc 11
Contextual Info: —302 — 74 69 7 Binary S yn chron ou s U p/D ow n Counters ENABLE LOAD OUTPUT CONTROl G MIECT if g COUNTER A DOWN CLOCK t C O OATA INPUTS > 7 4 1 6 8 * /JI1 7 4 1 6 9 U INAILE g—BW lflft REOtST ftCOIST CND P CLEAR ER CLOCK 7 ' T £ l } \ \ £ 7 4 1 7 5 ,

us8k

Abstract: d1272
Contextual Info: AS7M64T3256A AS7M64T3512A AS7M64T3256B AS7M64T3512B B Cache Modules Async Async Burst Burst Low Voltage 256/512 KByte Cache Modules with Tag PRELIMINARY ASYNCHRONOUS VERSIONS FEATURES 64-bit 3.3V asynchronous data PIN D I A G R A M a s y n c • 5V tolerant I/O specification

SiS 301 chipset

Abstract: opti chipset TAG 503 static ram 64kx8 malaysia microelectronic solution low power asynchronous SRAM 64KX8 3.3V tag 136 m2
Contextual Info: AS7M64U3256A Asvnc AS7M64U3512A Async í c i v u -i i i h - í i AS7M64L!32?6B B urst AS7M64U3512B B urst I l High-Performance 256/M2 KByte 3 .3 \ ^ Cache M odules «• Low Voltage 256/512 KByte Cache M odules with Tag PRELIMINARY ASYNCHRONOUS VERSIONS

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs

J-Squared Technologies

Contextual Info: S a l e s re p r e s e n t a t i v e s S a k s re p r e s e n t a t i v e s DOMESTIC REPS ALABAMA Concord Component Reps, Inc. 190 Lime Quarry, Suite # 102 Madison, AL 3 5758 205 772-8383 ARKANSAS Southern Sutes Marketing, Inc. 1702 N Collins Blvd., Suite # 2 5 0

29EE010

Abstract: CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)

transistor sb 772

Abstract: 9726 28-pin SOJ SRAM 8282 ADDRESS LATCH datasheet CI 9762 AS7C164 AS7C164-10PC AS7C164-12PC AS7C164-8JC AS7C164-20PC
Contextual Info: High Performance 8Kx8 CMOS SRAM AS7C164 AS7C164L 8K×8 CMOS SRAM Common I/O Features • Organization: 8,192 words × 8 bits • High speed - 8/10/12/15/20 ns address access time - 3/3/3/4/5 ns output enable access time • Low power consumption - Active: 633 mW max (10 ns cycle)