EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EIA1414-4P
Abstract: EIB1414-4P
Contextual Info: Excelics EIA/EIB1414-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 4W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EPA030B
Contextual Info: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING
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EIA1011-2P
Abstract: EIB1011-2P
Contextual Info: Excelics EIA/EIB1011-2P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA1415-2P
Abstract: EIB1415-2P
Contextual Info: Excelics EIA/EIB1415-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 2W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EIA1819-1P
Abstract: EIB1819-1P
Contextual Info: Excelics EIA/EIB1819-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.7-19.7GHz, 1W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA1415-8P
Abstract: 7371711
Contextual Info: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1414-2P
Abstract: EIB1414-2P
Contextual Info: Excelics EIA/EIB1414-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA1213-4P
Abstract: EIB1213-4P
Contextual Info: Excelics EIA/EIB1213-4P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 4W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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Contextual Info: Excelics EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER
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EIA1314-2P
Abstract: EIB1314-2P
Contextual Info: Excelics EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA1415-4P
Abstract: EIB1415-4P
Contextual Info: Excelics EIA/EIB1415-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 4W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EIA1314A-8P
Contextual Info: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1011-4P
Abstract: EIB1011-4P
Contextual Info: Excelics EIA/EIB1011-4P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 4W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA1213-2P
Abstract: EIB1213-2P
Contextual Info: Excelics EIA/EIB1213-2P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA1818-2P
Abstract: EIB1818-2P
Contextual Info: Excelics EIA/EIB1818-2P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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Contextual Info: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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Contextual Info: Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER
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EIA1718A-2P
Abstract: EIB1718A-2P
Contextual Info: Excelics EIA/EIB1718A-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.3-18.1GHz, 2W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA1718-1P
Abstract: EIB1718-1P
Contextual Info: Excelics EIA/EIB1718-1P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA1414-8P
Contextual Info: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1718-2P
Abstract: EIB1718-2P
Contextual Info: Excelics EIA/EIB1718-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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Contextual Info: Excelics EIA1415B-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.9-15.1GHz, 8W Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1818-1P
Abstract: EIB1818-1P
Contextual Info: Excelics EIA/EIB1818-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 1W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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