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    720 TRANSISTOR SMD SOT Search Results

    720 TRANSISTOR SMD SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF
    BLM21HE472BH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 4700ohm POWRTRN PDF
    BLM15PX330SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF

    720 TRANSISTOR SMD SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    720 TRANSISTOR smd sot-223

    Abstract: KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd
    Contextual Info: Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS th Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2


    Original     		KSP92 OT-223 720 TRANSISTOR smd sot-223 KSP92 KSP92 equivalent 720 TRANSISTOR smd sot 40X40 transistor 720 smd PDF

    Contextual Info: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW89 OT-23 PDF

    H1 IC

    Abstract: h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2 BCW69
    Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCW69 BCW70 OT-23 BCW69 H1 IC h2 marking smd BCW70 smd TRANSISTOR marking ku smd marking H2 PDF

    BCF30 c8p

    Abstract: BCF29 BCF30 smd marking c8p
    Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCF29 BCF30 OT-23 dis60 BCF29 BCF30 c8p BCF30 smd marking c8p PDF

    transistor 720 smd

    Contextual Info: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW29 BCW30 OT-23 BCW29 transistor 720 smd PDF

    transistor 720 smd

    Abstract: FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot
    Contextual Info: Transistors IC SMD Type Switching Transistor FMMT720 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 IC CONT 2.5A. 1 0.55 625mW power dissipation. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 IC up to 10A peak pulse current. +0.05 0.1-0.01


    Original     		FMMT720 OT-23 625mW -50mA -100mA -75mA -10mA, -50mA 100MHz -20mA transistor 720 smd FMMT720 TRANSISTOR SMD 1a 9 marking 720 transistor 720 TRANSISTOR smd sot PDF

    ic 810

    Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
    Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		BCW89 OT-23 ic 810 IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89 PDF

    smd TRANSISTOR BCW29

    Abstract: MARKING SMD PNP TRANSISTOR BCW29 BCW30 smd transistor marking C2 720 TRANSISTOR smd sot
    Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 32 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		BCW29 BCW30 OT-23 BCW29 smd TRANSISTOR BCW29 MARKING SMD PNP TRANSISTOR BCW30 smd transistor marking C2 720 TRANSISTOR smd sot PDF

    Contextual Info: SMD Type Product specification BCF29,BCF30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low voltage max. 32 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		BCF29 BCF30 OT-23 BCF29 PDF

    Contextual Info: Transistors IC SMD Type Product specification BCW69,BCW70 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		BCW69 BCW70 OT-23 dissipati-150 BCW69 PDF

    K 3264 fet transistor

    Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
    Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		O220AB OT404 BUK7508-55A BUK7608-55A O220AB K 3264 fet transistor K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A PDF

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 02N60
    Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 02N60 PDF

    03n60s5

    Abstract: SPN03N60S5 Q67040-S4203 VPS05163
    Contextual Info: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 03n60s5 SPN03N60S5 Q67040-S4203 VPS05163 PDF

    02n60s5

    Abstract: SPN02N60S5 VPS05163 02N6
    Contextual Info: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02n60s5 SPN02N60S5 VPS05163 02N6 PDF

    SPN03N60S5

    Abstract: 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203
    Contextual Info: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 Q67040-S4203 PDF

    Q67040-S4203

    Abstract: SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223
    Contextual Info: SPN03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 Q67040-S4203 SPN03N60S5 03N60S5 VPS05163 SMD TRANSISTOR MARKING 2A SOT223 PDF

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Contextual Info: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A PDF

    transistor smd 6.z

    Abstract: SPN03N60S5
    Contextual Info: SPN03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 0.7 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN03N60S5 OT-223 VPS05163 Q67040-S4203 03N60S5 transistor smd 6.z SPN03N60S5 PDF

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Contextual Info: SPN02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163 PDF

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Contextual Info: SPN01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A PDF

    SPN02N60S5

    Contextual Info: SPN02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5 PDF

    SPN01N60S5

    Abstract: 01N60S5 VPS05163 smd diode MARKING 03A
    Contextual Info: SPN01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A • Extreme dv/dt rated SOT-223 • Ultra low effective capacitances 4 • Improved noise immunity


    Original     		SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 SPN01N60S5 01N60S5 VPS05163 smd diode MARKING 03A PDF

    Contextual Info: SPN01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 VPS05163 OT-223 SPN01N60C3 Q67040-S4208 01N60C3 PDF

    01N60

    Contextual Info: SPN01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		SPN01N60C3 OT-223 VPS05163 Q67040-S4208 01N60C3 01N60 PDF