711DFI Search Results

X3A-BFT93

Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

BU603

Abstract: USA060-1
Contextual Info: 11 PHILIPS INTERNATIONAL 4SE D B 711Dfi2ti ODBOflfl'i 1 Œ P H I N BU603 T'33-/3 — SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.

k 246 transistor fet

Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
Contextual Info: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BYW96D

Abstract: diodes byw96d BYW96E ScansUX69
Contextual Info: 711DfiSb 0 0 4 0 7 1 7 0=12 H P H I N 5bE D PHILIPS INT E RN A TI ONA L SbE D _ BYW96D BYW96E _ T - 0 3 - ÍS AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers,

Contextual Info: 711DfiEb D D b T ì S ? SS2 « P H I N PXTA77 A_ _ _ _ _ SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal d a rlin g to n transistors, housed in a m icro m in ia tu re envelope SO T89 . T he com p le m e n tary ty p e is the P X T A 2 7 . QUICK REFERENCE DATA

Contextual Info: 711Dfi2b D D b ' m i 710 • PHIN PZTA92 PZTA93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment. QUICK REFERENCE DATA Collector-base voltage (open emitter)

transistor w 431

Contextual Info: T Philips Components RZ2731B32W Data sheet status Product specification data of Issue June 1992 NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL SbE D • 711Dfi2b OOHbSbb 3b3 I IPHIN DESCRIPTION AP P LIC A T IO N FEATU R ES • Interdigitated structure; high

PHILIPS UOC

Abstract: BB249 diode k IV PHILIPS DIODE SOD80
Contextual Info: PHILIPS INTERNATIONAL MIE D • fi ■ PHIN BB249 711DfiEb 0ÜEÔ71Û Jl '' SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB249 is a variable capacitance diode in a miniature glass envelope intended for electronic tuning in v.h.f. television tuners with extended band I FCC and OIRT-norm .

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

BLW50F

Abstract: PHILIPS 4312 amplifier
Contextual Info: bSE I m 711Dfi5b 0Db35M0 43^ H P H I N BLW50F PHILIPS INTERNATIONAL H.F./V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, A B and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

B34 transistor

Abstract: MPSH10 MPSH81 GHz PNP transistor transistor 911 transistor k 911
Contextual Info: Philips Semiconductors Product specification x>y7'& PNP 1 GHz switching transistor PHILIPS INTERNATIONAL FEATURES SbE D € MPSH81 711DfiEb QG4bD75 flbl B P H I N PINNING • Low cost • High transition frequency. PIN DESCRIPTION DESCRIPTION 1 collector 2

metal detector coil DIAGRAM

Abstract: DM7107 inductive proximity detector ic inductive proximity circuit inductive proximity detector with transistor philips 3h1 pot core PROXIMITY inductive ic metal detectors IC pot core 3h1 OM390
Contextual Info: / PHILIPS INTERNATIONAL 5bE D • O M 390 OM391 \ 711DfiEt. 0047104 3AT ■ PHIN HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated c ircu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n , especially

BUK454-600B

Abstract: BTA12-600B 10A
Contextual Info: PHILIPS INTERNATIONAL bSE D B9 711DfiEb OObHQbb 67D • P H ] Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

9.D8

Contextual Info: INTEGRATED CIRCUITS 74F827 10-bit buffer/line driver, non-inverting 3-State 74F828 10-bit buffer/line driver, inverting (3-State) Product specification 1994 Dec 5 IC15 Data Handbook Philips Semiconductors PHILIPS P H IL IP S 711Dfi2b □□A733E 70Ì Philips Semiconductors

LTD202R-12

Abstract: LTD202R-22 display LTD202R22
Contextual Info: PHILIPS INTERNATIONAL LOE D • 711Dfi5b 0057030 BPHIN Philips C o m p o nents LTD202 Data sheet status Product specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD202 is a 2-digit, 7-segment LCD. It is intended for

BFG520

Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Contextual Info: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

BLV62

Abstract: philips ELECTROLYTIC capacitor fe
Contextual Info: PH ILIPS bSE J> INTERNATIONAL B 711DfiEb ODbETfiD 5T4 • PHIN Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Poly-silicon emitter-ballasting

74ABT16245

Abstract: MB2245DL
Contextual Info: PHILIPS INTERNATIONAL LSE D • 711Dfi2b Q057fl37 DTD ■ PHIN Philip« Semiconductors Advanced BICMOS Products Preliminary specification Dual octal transceivers with direction pins 3-State QUICK REFERENCE DATA FEATURES • 16-bit bidirectional bus interface

transistor 1264-1

Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074
Contextual Info: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in

BFG96

Abstract: BFG32 MSB037 3H2 philips MBB352
Contextual Info: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in

DSAFRZWS

Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK452-60A

Abstract: BUK452-60B T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D B 711DfiSb D0fc.4D5b 114 B I P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in