7002 2N7002 Search Results

702 sot 23

Abstract: transistor marking 7002
Contextual Info: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

marking 7002

Contextual Info: 2N7002 Mosfet N-Channel SOT-23 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: 7002 Dimensions in inches and (millimeters)

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

2n7000 equivalent

Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

BS170

Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V

VQ1000J

Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225

equivalent of BS170

Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
Contextual Info: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P

2N7002x

Abstract: transistor SOT23 1d 2N7002M
Contextual Info: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro­

m2n7000

Abstract: 1000J sot23 BS170
Contextual Info: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

MOSFET S170

Abstract: s170 mosfet s170 S-52429 1000J s170 to92
Contextual Info: 2N7000/7002, VQIOOOJ/P, BS170 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *t>S on M a x (Q ) V G S (th )(V ) 2N7000 5 @ V q s = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VG S = 10 V 1 to 2.5 0.115 V(BR)DSS M i n (V )

SOT23 FET

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 7002 Advance Information S m a ll-S ig n a l Field E ffe ct T ra n sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S N-CHANNEL SMALL-SIGNAL TM O S FET rDS on = 7.5 O HM 60 VOLTS This TM O S FET is designed fo r high-speed sw itch in g

Contextual Info: '.PLESSEY SEf ll CO'ND/DISCRETE 03 / N-channel enhancement mode vertical D M O S FET DF|?aaDS33 <=2 " 2N7002 ADVANCE PRODUCT INFORMATION A B S O L U T E M A X I M U M R A T IN G S Param eter 2N 7002 Sy m b o l U nit D rain-so urce voltage V DS 60 V C o n tin u o u s drain current at T A = 2 5 ° C

2N7002

Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
Contextual Info: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

SMD MARKING CODE 7002

Abstract: QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg
Contextual Info: MOSFET SMD Diodes Specialist 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C)

2N7002-G

Abstract: MOSFET
Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S Maximum Ratings (at T =25°C) A Parameter Drain-Source voltage

2N7002 MARKING

Abstract: 2N7002 SOT-23 2N70 2N7002 SOT-23 PEL
Contextual Info: 2N7002 S m all Signal M O S F E T N -C hannel Features: •Low On-Resistance : 3Q *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF •Low Threshole :1 .5V TYE *Fast Switching Speed : 7.5ns M a x im u m R atings (TA=25°C Unless Otherwise Specified)

N7000

Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been

Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G Maximum Ratings (at T =25°C) A Value Unit VDS 60 V Drain current ID

2N7002H

Abstract: SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23
Contextual Info: MOSFET SMD Diodes Specialist 2N7002-HF N-Channel RoHS Device Features SOT-23 Halogen free. Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15)

2N7002-HF

Abstract: MOSFET
Contextual Info: MOSFET 2N7002-HF N-Channel RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10)

sot 23 70.2

Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Contextual Info: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code

resistor 2010

Abstract: 47 Ohm to 100 Ohm resistor VP2-0083 Transformer 9v 2a EC21 51 ohm 5w 12k resistor MAX1856EUB resistor 100k ohm 25MV390AX
Contextual Info: D1 EC21 QS03L VIN 9V to 14V C3 390uF 25V MV-AX 2x 10 SHDN 9 VCC 4 R9 4,9 15 0.5W 1 C9 100pF 3,5 2 D2 EC21 QS03L N1 IRLL 2705 CS+ 6 PGND 2 7 6 12 EXT 8 U1 MAX1856 C1 1uF R10 47 8,10 C8 680pF 1 LDO R1 100k (500kHz) 11 T1 16.4uH VP2 -0083 7 R3 100 C7 1nF R2

IMIT TC2

Abstract: Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000
Contextual Info: Semiconductor March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third