6A TRANSISTOR Search Results

53-06A

Abstract: 2n5306 2N5305
Contextual Info: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are

Contextual Info: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)

2SC4296

Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max

2N5305

Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
Contextual Info: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are

2SD2633

Abstract: 84AB 2sd26
Contextual Info: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)

2SC4296

Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max

pnp 1500v 8a

Abstract: fr120 2SD1548 2SD2253 2SC4352 2sc5027 2SC2706 2SD2499 2sc4544 diode 6a 250v
Contextual Info: Horizontal Deflection Output Transistors for Color TV Description Ic For Small Screen Color TV VC80=1500V TO-3P H (BS) 2.5A 3.5A 2.5A 3.SA 3.5A 5A 2SD1431 2SD1432 6A 2SD1433 2SD1427 SA 6A 2SD1428 8A 10A 6A 7A 9A For Largs 16:9 Sctmh Color TV Vcao=1700V For Large 16:9 Screw Color TV

1014-6A

Contextual Info: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed

vp1210n5

Abstract: VP1204N2
Contextual Info: yjßSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package If ^DS ON BVdgs -40V (max) 0.8Q -60V 0.8£i -100V 0.8£i -6A DICEt TO-39 TO-220 -6A VP1204N2 VP1204N5 VP1204ND -6A VP1206N2

schematic atx 250

Abstract: computer mother board circuit diagram I740 IRU1160 IRU1160CM IRU1160CP
Contextual Info: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that

I740

Abstract: IRU1160 IRU1160CM IRU1160CP
Contextual Info: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that

Kvp 26A

Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Contextual Info: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000

2SC5370

Abstract: FM20
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

2SD2389 power transistor

Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS

2SC5370

Abstract: FM20 2402 transistor
Contextual Info: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A

BAT54A

Abstract: MAX1945 MAX1945R MAX1945REUI MAX1945S MAX1945SEUI
Contextual Info: 19-2640; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA 1MHz, 1% Accurate, 6A Internal Switch Step-Down Regulators Applications Features ♦ 6A PWM Step-Down Regulator with 95% Efficiency ♦ 1MHz/500kHz Switching for Small External Components ♦ 0.76in2 Complete 6A Regulator Footprint

atx 2.03 power supply schematic dc

Abstract: I740 IRU1160 IRU1160CM IRU1160CP
Contextual Info: Data Sheet No. PD94130 IRU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown The IRU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that

2SB1254

Abstract: 2SD1894
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD1894 APPLICATIONS

2SB1490

Abstract: 2SD2250
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2250 APPLICATIONS

Contextual Info: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that

APU1160

Abstract: APU1160S I740 regulator 5a 28v
Contextual Info: Technology Licensed from International Rectifier APU1160 6A ULTRA LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION FEATURES 0.62V Dropout at 6A Fast Transient Response 1% Voltage Reference Initial Accuracy Built-In Thermal Shutdown RoHS Compliant The APU1160 is a 6A regulator with extremely low dropout voltage using a proprietary bipolar process that

si 13001

Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
Contextual Info: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm

si 13001

Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
Contextual Info: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A pulsed * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with