68V4 Search Results

Contextual Info: Prelim inary CMOS SRAM KM 68V4002B/BL, KM 68V4002BI/BLI D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.

TSOP 2-44

Abstract: km68
Contextual Info: 68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g

KM68V4000

Contextual Info: 68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: Preliminary CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: Preliminary CMOS SRAM 68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target

Contextual Info: Preliminary 68V4002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. The 68V4002A is a 4,194,304-bit high-speed Static • Low Power Dissipation Standby (TTL) Random A ccess M em ory organiza tion as 524,28 8

Contextual Info: 68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. 68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

7191B

Contextual Info: CMOS smfñ 68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage 68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

Contextual Info: P re lim in a ry K M 6 8 V 4 0 0 0 B Z, K M 6 8 U 4 0 0 0 B Z Fami l y D o c u m C M O S SR A M æ n t TitSe 5 1 2 K x 8 L o w Voltage & Low Powe r SRAM Data Sheets for 48-CSP visio n H astory Rgy-No. History Draft Data Rev. 0.0 -1 's t edition -P a cka g e Dimension Finalized

Contextual Info: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI D o c u m e n t Tiîi e 51 2 Kx 8 B i t High Speed Static RAM 3.3V Operat ing , R e v o l u t i o n a r y Pin out. Operat ed a t C o m m e r c i a l and I nd us tr ia l Te mp er a tu r e Range. Revision H istory RevNo.

178M05

Abstract: RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A
Contextual Info: 固定抵抗器 FIXED RESISTORS OPERATING TEMP. K55VJ155C 特長 FEATURES 1AV4B: Y電流雑音が小さく耐パルス性が高い Yマルチマウントに特に適している 1AV4B: YCurrent noise level is low, yet highly resistant to pulses. YEspecially suitable for high speed automated mounting.

Contextual Info: 68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns max. • Low power dissipation - Standby(CMOS) : 180nW(Max.) L Version : 54nW (Max.) L-L Version -O p era ting : 144mW /MHz(Max.)

Contextual Info: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Till 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. y s gyffl g j 8 R ^pvi<«ion RevNo. aHs siQg,tn s r f j rv Tg History Draft Data Remark Rev. 0.0

KM68V4002A

Abstract: D 1108 SRAM512KX8 C50E
Contextual Info: Preliminary 68V4002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,1 5,20 ns M ax. T h e K M 68 V 4 0 02 A is a 4 ,1 9 4,30 4 -b it high-speed Static • Low Pow er Dissipation Standby : 5 0 mA

68U4000CL-L

Contextual Info: Preliminary CMOS SRAM 68V4000C. KM68U4000C Family Document T ills 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied June 12, 1998 Prelim inary

Contextual Info: Preliminary 68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process

cs 308

Abstract: KM68U4000A
Contextual Info: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage 68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28th 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19th 1996

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: Preliminary CMOS SRAM 68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 s t edition - Package Dimension Finalized Feb.4 th, 1997 Preliminary