KM68V4000 Search Results

TSOP 2-44

Abstract: km68
Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g

32-TSOP2-400F

Abstract: altl
Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version

Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

Contextual Info: KM68V4000L/L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 70, 85, 100, 120ns (M ax.) • Low P ow er D issipation S ta tic R a n d o m A c c e s s M e m o ry o rg a n iz e d a s 524,288

KM68U4000CL-L

Abstract: 3A3103
Contextual Info: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V

Contextual Info: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary

KM68U4000A

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

7191B

Contextual Info: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V

SRAM_256KX16

Abstract: KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F
Contextual Info: KM616V4000B/C, KM616U4000B/C CMOS SRAM 256Kx16 bit Low Power and Low Voltage • Process Technology : TFT • Organisation : 256K x16 • Power Supply Voltage KM68V4000B/C Family : 3.0~3.6V KM68U4000B/C Family : 2.7~3.3V • Low Data Retention Voltage : 2V Min

KM6 II

Abstract: KM68U4000A
Contextual Info: KM6 1 6 U 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

F TTL family characteristics

Abstract: KM68U4000A
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM Document Title 512K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft August 16, 1994 Advance 0.1 Revise - Speed bin=70/85/100ns at Vcc=3.3V December 22, 1994

Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns max. • Low power dissipation - Standby(CMOS) : 180nW(Max.) L Version : 54nW (Max.) L-L Version -O p era ting : 144mW /MHz(Max.)

Contextual Info: Preliminary KM68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process

cs 308

Abstract: KM68U4000A
Contextual Info: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

32-TSOP2-400F

Abstract: altl
Contextual Info: ADVANCED CMOS SRAM KM68V4000AL/AL-L 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION « Fast Access Time : 70, 100,120ns{Max. • Low Power Dissipation Standby CMOS) : 3// W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

KM68V4000CLT-7L

Abstract: KM68U4000C KM68V4000C A1122-1 KM68V4000CLT7L KM68U4000CL-L
Contextual Info: KM68V4000C, KM68U4000C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns

Contextual Info: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 s t edition - Package Dimension Finalized Feb.4 th, 1997 Preliminary

Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

Contextual Info: Preliminary CMOS SRAM KM68V4000C. KM68U4000C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied sp e e d Din cnange KM 68U4000C : 85/100ns -> 70/85/100ns

Contextual Info: S A M S UN G E L E C T R O N I C S INC b7E » • 7*ib414E D 0 1 7 5 2 3 KM68V4000ÜL-L 434 H S H 6 K CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 8 5 ,1 0 0 ,120ns (Max.) • Low Power Dissipation

KM68V4000AL-L

Abstract: KM68U4000A lm68
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family

KM616V4000BLTI-8L

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4um CMOS • Organization: 256Kx16 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3.0±0.3V