65MIL Search Results

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

AH420-EPCB900

Abstract: AH420-EPCB2140
Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2400 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with up to -45 dBc ACLR and

T25C

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

Mil-I-19166

Abstract: HHI-595C 3M 5413 3M tape,#27 kapton 5413 YR-1285 LR93411 HHI-553C SCOTCHFIL E17385 Scotch
Contextual Info: 3M~ Tapes 3M A n tistatic U tility Tape 40 continued Product 3 Inch Core StiM CwaQty. 40 1" x 24 or 72 yds (25 mm x 20 or 33 m) 9 rolls 40 7/8" x 24 or 72 yds (22 mm x 20 or 33 m) 12 rolls 40 3/4" x 24 or 72 yds (19 mm x 20 or 33 m) 12 rolls 40 5/8" x 24 or 72 yds (15 mm x 20 or 33 m)

Contextual Info: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power

MAX3091

Abstract: photodiode 850nm HFAN-08 photodiode die WAFER PIN photodiode sensitivity 850nm ttl photodiode amplifier
Contextual Info: 19-3278; Rev 1; 7/04 150Mbps Automotive Fiber Optic Receivers The MAX3901/MAX3902 are optimized for low-cost polymer-clad silica PCS and plastic optical fiber (POF) automotive receivers. These parts operate over an extended -40°C to +140°C (junction) temperature range.

cmca v2.1

Abstract: S/cmca v2.1
Contextual Info: Application Note 1811 October 2013 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET

ISL6236

Abstract: ISL6251 SLG8SP512T NB82801HBM quanta 3U22C intel G41 MOTHERBOARD crb PQ19 Socket AM2 GST5009LF
Contextual Info: 5 MODEL: D 4 3 2 1 REV: CHANGE LIST: 1A FIRST RELEASE MODEL : Z01 MB 1B PAGE02. PAGE03. PAGE03. PAGE05. PAGE06. PAGE08. PAGE11. PAGE12. PAGE13. PAGE15. PAGE16. PAGE18. PAGE20. PAGE21. PAGE22. PAGE23. PAGE24. PAGE25. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1.

CX20561

Abstract: WPCE775 rtm870t OZ8116LN 8116l cx20561-15z RTM870T-690 oz8116l turion 64 x2 pin diagram BCM5784M
Contextual Info: 5 4 3 2 1 01 Z07 SYSTEM BLOCK DIAGRAM VCC_CORE DDRII-SODIMM1 +1.8VSUS +SMDDR_VREF D PG 8,9 AMD S1g1 HOST 200MHz Athlon Rev.F/G Dual-Core 31W/35W PCIE 100MHz DDR II 667 MHZ D DDRII-SODIMM2 +1.8VSUS +SMDDR_VREF +1.2V +2.5V +1.8VSUS VCC_CORE +SMDDR_VTERM CPU THERMAL

uP6163

Abstract: AN12947A rt8206 ALC889X W25X16AVSSIG MX25L1605AM2C varistor Q20 K 275 SLG8SP585V RT8206B up6111
Contextual Info: 5 4 3 2 1 +VDDIO_CLK U21 +3V +1.05V +3V_CLK L28 C303 C293 C297 C299 C298 C285 4.7U/10V_8 4.7U/10V_8 .1u/16V_4.1u/16V_4.1u/16V_4.1u/16V_4 C302 .1u/16V_4 XTAL_OUT XTAL_IN R199 10 CLK_ICH_14M 33_4 Place the 33 ohm resistors close to the CK 505 C CPU_SEL CLK_SDATA

sot23 w32

Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
Contextual Info: Main System Design location Level Parts Code Parts Description Spec.

NPTB00025

Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
Contextual Info: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

circuit diagram of 13.56MHz RF Generator

Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
Contextual Info: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET

Contextual Info: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias

NPT25100

Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

K 2645 schematic circuit

Abstract: diode t25 4 j3 776MHz AP561-PCB900 AP561-PCB2500
Contextual Info: AP561 0.7-2.9 GHz 8W Power Amplifier Product Features Product Description • 0.7 – 2.9 GHz • +39 dBm P1dB • 13 dB Gain @ 2.6 GHz • 1.5% EVM @ 30 dBm Pout • +12 V Supply Voltage • Lead-free/green/RoHS-compliant 5x6 mm power DFN package Applications

receiver photodiode 850nm 8Mbps

Contextual Info: 19-3278; Rev 0; 5/04 150Mbps Automotive Fiber Optic Receivers Features ♦ -40°C to +140°C Operating Junction Temperature The MAX3901/MAX3902 are optimized for low-cost polymer-clad silica PCS and plastic optical fiber (POF) automotive receivers. These parts operate over an

rf transformer

Abstract: SCHEMATIC 5kw power supply 30A 220V ferrite core transformer free data
Contextual Info: Application Note 1812 September 2011 13.56 MHz, Class D Push-Pull, 2KW RF Generator with Microsemi DRF1300 Power MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1300/CLASS-D Reference design is available to expedite the evaluation of the DRF1300 push-pull

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Product Description • 400 – 2700 MHz Functional Diagram The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

pericom sot23-6

Abstract: marking 326 SOT23-6 PS8203 marking AA 6-pin MARKING ZT SOT23 TRANSISTOR T5 MARKING CODE 5PIN PI5A124TEX PI5A121 PI5A122 PI5A124
Contextual Info: PI5A121/PI5A122/PI5A124 Wide Bandwidth Analog Switches Features Description • Single-Supply Operation +2V to +6V • Rail-to-Rail Analog Signal Dynamic Range • Low On-Resistance (6Ω typ. with 5V supply) Minimizes Distortion and Error Voltages • On-Resistance Flatness, 3Ω typ.

PS8203

Abstract: match for A124 transistor A124 transistor 2.5V SOT23 4PC 5-PIN 2L SOT23-5 A124 PI5A121 PI5A121T PI5A122 PI5A122T
Contextual Info: f u P E R IC O M mi P I 5 A 1 2 1 /P I 5 A 1 2 2 /P I 5 A 1 2 4 IMI mi I mi I mi IM11MI mi I mi I mi IMI mi I mi I mi IMI mi I mi I mi IMI mi I mi I mi IM11MI mi I mi I mi IMI mi I mi I mi IMI mi I mi I mi IMI mi I Wide Bandwidth Analog Switches Features Description

AH420-EG

Abstract: amplifier MA-920 AH42 AH420-EPCB1960 AH420-EPCB2140 AH420-EPCB900 marking NEX f2140
Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

PIMD3

Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power

PI5A121TEX

Abstract: pericom sot23-6 MARKING ZT SOT23 TRANSISTOR PI5A124TEX PI5A121 PI5A121TX PI5A122 PI5A124 SC70-5 marking code 4pc
Contextual Info: PI5A121/PI5A122/PI5A124 Wide Bandwidth Analog Switches Features Description • Single-Supply Operation +2V to +6V • Rail-to-Rail Analog Signal Dynamic Range • Low On-Resistance (6Ω typ. with 5V supply) Minimizes Distortion and Error Voltages • On-Resistance Flatness, 3Ω typ.