65536W Search Results

le28f1101t-40

Abstract: xx20H 65536words16bits
Contextual Info: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption

HM10490-10

Abstract: HM10490-12 TAA 840
Contextual Info: HM10490 Series 65536-word x 1-bit Fully Decoded Random Access Memory The HM10490 is ECL 10K compatible, 65536word by 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage. Pin Arrangement Features

CXK5T16100TM

Contextual Info: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.

CXK5T16100TM

Contextual Info: SONY I CXK5T161OOTM -1 0 L L X /1 2 L L X 65536-word x 16-bit High Speed CMOS Static RAM Preliminary Description The CXK5T16100TM is a general purpose high speed C M O S static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

5 pin A13E

Abstract: a13e ic
Contextual Info: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

5sdpsoftware

Contextual Info: Preliminary Specifications CMOS LSI LE28FV1101T-70/90/15 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time LE28FV1101T-70 : 70ns(Max.)

B2G3

Contextual Info: blE D • 44=^203 0051b77 44T ■ H I T 5 HM101490 S e r i e s HIT4CHI/ logic/ arrays/ mem 65536-word x 1-bit Fully Decoded Random Access Memory The HM101490 is e c l 100K compatible, 65536word by l-bit read/write random access memory developed for high speed systems such as scratch

Contextual Info: ,UJNV CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Prelim inary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and high speed.

65536

Contextual Info: Section 2 BiCMOS ECL RAMs — At a Glance Pag« Davie* Maximum Accaaa Tim * <na 2-3 MBM10C490-15 15 65536 bits 65536WX 1b) 22-pin 2-13 MBM100C490-15 15 65536 bits (65536WX 1b) 22-pin Ceramic DIP, FPT 24-pad Plastic LCC 24-pad Ceramic LCC 2-23 MBM10C494-15

"24 pin" DRAM

Abstract: mb81c1501
Contextual Info: Section 3 Application Specific DRAM s — Page Devfc« Maximum Accesa Tima na 3-3 MB81461-12 -15 120 150 A t a Glance Capacity Package Options ORAM: 262144 bits (65536W x 4b) 1016 bits (256w x 4b) 24- pin Plastic DIP, ZIP SAM : 3-35 MB81461B-12 -15 120 150

LCC 18 Pin Package

Abstract: 26PIN 26-PIN MB81C466-10 20-PIN
Contextual Info: Section 2 CMOS DRAMs — At a Glance Maximum Acc««« Tlm« n« Capacity Package Option« 262144 bits (262144wx 1b) 16-pin 18-pin Plastic Plastic DIP LCC 262144 bits (65536w x 4b) 18-pin 18-pin 20-pin 18-pin 18-pin 20-pin 26-pin Plastic Ceramic Plastic Plastic

DIN 65536

Abstract: DG-22N HM101490-12 HM101490 HM101490-10
Contextual Info: HM101490 Series 65536-word x 1-bit Fully Decoded Random Access Memory The HM101490 is ECL 100K compatible, 65536word by 1-bit read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage. Pin Arrangement

f11u

Abstract: FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055
Contextual Info: Ordering number : EN5055 _ CMOS LSI No. 5055 LC382161T-17 IS ipîppi; 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM J 8¡|lí¡Bí: 1 Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x

sop-40 16-bit

Abstract: LC321664AJ LC321664AM SOJ40 MIFA ao3476
Contextual Info: Ordering number : EN 4795A CMOS LSI No LC321664AJ, AM-80 4795A S A \Y O 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a

Contextual Info: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

Contextual Info: HM6208/HM6208H Series 4-Bit CMOS Static RAM 65536-Word X 4-Bit High Speed CM O S Static RAM The Hitachi HM 6208 and HM 6208H are high speed 256k static R A M S organized as 64k-word x 4 bit. They realize high speed a cc e ss time 25/35/45 ns and low power consum ption, em ploying

A02H2

Abstract: EZ23 LC321664AT LC321664AT-80 TSOP44 7w7b A021-46
Contextual Info: Ordering number : EN % 4942 j _ CMOS LSI LC321664AT-80 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a

mJI 1032

Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Contextual Info: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword X 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

Contextual Info: HM62W864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-281B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62W864 is a CMOS static RAM organized 64-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. It

Contextual Info: HM621664HBI Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-786 A Z Rev. 1.0 May. 19,1997 Description The HM621664HBI is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (20 ns) with employing 0.8 |im CMOS process and high speed circuit designing

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)

Contextual Info: r r u n TECHNOLOGY e A B _ LTC1605 16-Bit, lOOksps, Sampling ADC FCRTURCS D C S C R IP TIO n • Sample Rate: 10Oksps ■ Single 5V Supply ■ Bipolar Input Range: ±10V ■ Power Dissipation: 55mW Typ ■ Integral Nonlinearity: ±2.0LSB Max