B2G3 Search Results

Contextual Info: WT-B2G32USUG20C TOP Mountable ChipLED Product Specification Specification Iv Material Quantity USD: 45.0-285.0 mcd UYG: 28.5-180.0 mcd O @20mA/ Ta= 25 C Tolerance: + 10% USD:615-635 nm lambda λD UYG:567.5-579.5 nm O @20mA/ Ta= 25 C; Tolerance; + 0.5nm Vf

Contextual Info: Top Mountable ChipLED B2G32USNB05C-000113 Harvatek Surface Mount CHIP LEDs Approval Sheet B2G32USNB05C-000113 Official Product HT Part No. B2G32USNB05C-000113 Tentative Product * Specifications are subject to changes for improvement without advance notice. Proprietary data, drawings, and

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

PM 438 BL

Abstract: HM51W4400BLTT-7
Contextual Info: HM51W4400B Series-HM51W4400BL Serios Low Power Version 1,048,576-word X 4-bit Dynamic Random Access Memory. T h e H ita c h i H M 5 1 W 4 4 0 0 B /B L is a C M O S dynamic RAM organized 1,048,576 words x 4 bits. H M 51W 4400B /B L has realized hig h er density,

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series 2.097.152-word x 72-bit High Density Dynamic RAM Module 2.097.152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-717A Z Rev.1.0 Jan. 27,1997 Description The HB56UW272EJN, HB56UW264EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

HN27C4096

Abstract: HN27C4096HCC HN27C4096HG HN27C4096HG-85 HN27C4906HCC-85 Hitachi Scans-001
Contextual Info: blE D • 44^203 002214^ ^ 7 ■HIT2 HN27C4096HG/HCC Series-262,144-word x 16-Wl C M O S U V Era sa b le and Program m able ROM HITACHI/ LOGIC/ARRAYS/MEM HN27C4096HG/HCC is a 4-M bit u ltravio let erasable and electrically programmable RO M , featuring high speed and low power dissipation.

Contextual Info: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-886 (Z) Preliminary, Rev. 0.0 F eb .6,1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: HM51W4265C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-477A Z Rev. 1.0 Jul. 31, 1996 Description The Hitachi HM51W4265C Series is a CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51W4265C Series has realized higher density, higher performance and various functions by employing

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

Contextual Info: SIE D • MMSfej5D3 DGlfibflS TSfi ■HITE HM514400L Seríes LowPowerVersion 1,048,576-Word x 4-Bit Dynamic Random Access Memory ■ d e s c r ip t io n H ITA C H I/ LOGIC/ARRAYS/MEM H M 514400U P Series The Hitachi HM514400 ¡3 a CMOS dynamic RAM organized 1,048,576 word x

HM514402B/BL

Abstract: HM514402
Contextual Info: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v ario u s fu n c tio n s by

Contextual Info: ADE-203-223 A (Z) * HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM Preliminary HITACHI — Self refresh (1024 refresh cycles: 16 ms) All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides

B2G3

Contextual Info: blE D • 44=^203 0051b77 44T ■ H I T 5 HM101490 S e r i e s HIT4CHI/ logic/ arrays/ mem 65536-word x 1-bit Fully Decoded Random Access Memory The HM101490 is e c l 100K compatible, 65536word by l-bit read/write random access memory developed for high speed systems such as scratch

Contextual Info: HB56S1636 Series, HB56S1632 Series 16.777.216-word x 36-bit High Density Dynamic RAM Module 16.777.216-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-694A Z Rev. 1.0 May 16,1997 Description The HB56S1636 is a 16M x 36 dynamic RAM module, mounted 36 pieces of 16-Mbit DRAM

HM624256

Abstract: hm624256lp static ram 4802
Contextual Info: HITACHI/ LOGIC/ARRAYS/PIEM STE 44TbS03 D HM624256 Series- G01bS27 5 T -4 6 -2 3 -1 4 262144-WORD x 4-BIT HIGH SPEED CMOS STATIC RAM The Hitachi HM624256 is a high sp ee d 1M static RAM organized a s 256-kword x 4-bit. It realizes high sp ee d a cc e ss

Contextual Info: HM51W17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast

HN27C301AG-12

Abstract: HN27C301AG-20 hitachi eprom DP-32 HN27C301AG-10 HN27C301AG-15 HN27C301AP-12 HN27C301AP-15 HN27C301AG Series Hitachi Scans-001
Contextual Info: HN27C301A Series 1M 128K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C301A is a 1 -M egabit Ultraviolet Erasable and O ne-Tim e Program mable Electrically Program mable Read Only M em ory organized as 131,072 x 8-bits. The HN27C301A features fast address access tim es and low

TGS 203

Contextual Info: blE » • 4 4 cl t j 2 ü 3 D022flflfl Tfi3 H M 5 1 4 1 O O A /A L /A S L S e rie s — 4,194,304-wordx1-bit Dynamic RAM HITACHI/ The H itachi HM 514100A/AL/ASL is a CMOS dynamic RAM organized 4,194,304-word x 1-bit. HM514100A/AL/ASL has realized higher density,

Contextual Info: HM51181651 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-754A Z Rev. 1.0 Mar. 5,1997 Description The Hitachi HM5118165I is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51181651 offers

Contextual Info: HM628512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-640A Z Rev. 1.0 Dec. 2,1996 Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.5 jun Hi-CMOS process technology. The

Contextual Info: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and

Contextual Info: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word X 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page

m514260

Abstract: m514260a M51426
Contextual Info: HM514260A/AL-6R Series Preliminary HM51S4260A/AL-6R Series 262,144-word x 16-bit Dynamic Random Access Memory I • I | T ■ ■ I A The Hitachi HM514260A/AL are CMOS dynamic R AM o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 16 -b it. H M 514260A /A L have realized higher density,