65536WORDS Search Results

le28f1101t-40

Abstract: xx20H 65536words16bits
Contextual Info: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption

CXK5T16100TM

Contextual Info: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.

CXK5T16100TM

Contextual Info: SONY I CXK5T161OOTM -1 0 L L X /1 2 L L X 65536-word x 16-bit High Speed CMOS Static RAM Preliminary Description The CXK5T16100TM is a general purpose high speed C M O S static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

5sdpsoftware

Contextual Info: Preliminary Specifications CMOS LSI LE28FV1101T-70/90/15 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time LE28FV1101T-70 : 70ns(Max.)

Contextual Info: ,UJNV CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Prelim inary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and high speed.

101490

Contextual Info: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

P0820A

Abstract: 32PIN CXK5V8512TM
Contextual Info: CXK5V8512TM -85LLX/10LLX 65536-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized

CXK5T8512TM

Abstract: CXK5T8512TN
Contextual Info: CXK5T8512TM/TN -10LLX/12LLX 65536-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits.

isa0

Abstract: OA10
Contextual Info: HM10504-10/12 •Preliminary 65536-W ords x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10504 is ECL 10K com patible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM10504“10/12 65536-Words x — Preliminary 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10504 is ECL 10K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM10490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10490 is ECL 10K compatible, 65536-words by 1-bit read/ write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

icc3

Abstract: CXK5V16100TM
Contextual Info: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this

Contextual Info: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM6708 Series 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM The H M 6 70 8 Series has been converted to the H M 6 70 8A Series. The new A Series is com ­ pletely compatible with the non-A Series. Please refer to the specification comparison below to assist in your conversion.

101490

Contextual Info: HM101490 Series — Pre lim in ary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is EC L 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

HM6709AJP-15

Abstract: HM6709AJP-20
Contextual Info: HM6709A Series 65536-word x 4-bit High Speed Static Random Access Memory Features 65536-words × 4 bit organization Fully TTL compatible input and output 1.0 µm Hi-BiCMOS process +5 V single supply Completely static memory No clock or timing strobe required

Hb203

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM S1E D 44^203 GGlfiOOV 0 7 5 • HM6709A S e rie s - • Preliminary W6 65536-Word x 4-Blt High Speed Static RAM - 2 3 ■ FEATURES • 65536-words x 4 bit organization • Fully TTL compatible input and output • 1.0/tm Hi-BiCMOS process

Contextual Info: HM101504F-10/12 — Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory • PIN ARRANGEMENT ■ DESCRIPTION 32 □ CS The HM101504 is ECL 100K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM10504-10/12 •Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory ■ DESCRIPTION The HM10504 is ECL 10K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM6708A Series — • Preliminary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0/i Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

DP-28N

Contextual Info: HM6709A Series — •P relim inary 65536-Word x 4-Bit High Speed Static RAM ■ • • • • • FEATURES 65536-words x 4 bit organization Fully TTL compatible input and output 1.0/im Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

952V

Abstract: HI410
Contextual Info: HM10490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10490 is ECL 10K compatible, 65536-words by 1-bit read/ write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

Contextual Info: HM100490-15- Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory HM100490-15 is ECL 100k compatible, 65536-words % 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.