65536WORDS Search Results

le28f1101t-40

Abstract: xx20H 65536words16bits
Contextual Info: Preliminary Specifications CMOS LSI LE28F1101T-40/45/55/70 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time: 40ns/45ns/55ns/70ns Low Power Consumption

CXK5T16100TM

Contextual Info: CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits.

CXK5T16100TM

Contextual Info: SONY I CXK5T161OOTM -1 0 L L X /1 2 L L X 65536-word x 16-bit High Speed CMOS Static RAM Preliminary Description The CXK5T16100TM is a general purpose high speed C M O S static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

5 pin A13E

Abstract: a13e ic
Contextual Info: SONY I CXK5T161OOTM 65536-word x 16-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and

5sdpsoftware

Contextual Info: Preliminary Specifications CMOS LSI LE28FV1101T-70/90/15 1M 65536wordsx16bits Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 128word per sector Fast Access Time LE28FV1101T-70 : 70ns(Max.)

Contextual Info: ,UJNV CXK5T16100TM -12LLX 65536-word x 16-bit High Speed CMOS Static RAM Prelim inary Description The CXK5T16100TM is a general purpose high speed CMOS static RAM organized as 65536words by 16-bits. Special feature are low power consumption and high speed.

101490

Contextual Info: HM101490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

P0820A

Abstract: 32PIN CXK5V8512TM
Contextual Info: CXK5V8512TM -85LLX/10LLX 65536-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized

CXK5T8512TM

Abstract: CXK5T8512TN
Contextual Info: CXK5T8512TM/TN -10LLX/12LLX 65536-word x 8-bit High Speed CMOS Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits.

isa0

Abstract: OA10
Contextual Info: HM10504-10/12 •Preliminary 65536-W ords x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10504 is ECL 10K com patible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: M ITSU BISHI LSls M 5 M 5 V 2 1 3 2 G P - 5 H ,- 5 ,-6 ,-7 ,- 8 oe^ o P ,+*&• a <vOÖ!«cl 2097152-BIT 65536-WORD BY 32-BIT SYNCHRONOUS BURST SRAM DESCRIPTION The M5M5V2132 is a family of 2M bit synchronous SRAMs organized as 65536-words of 32-bit. The M5M5V2132 provides a

stk 415

Contextual Info: HM 10490 S N © S —Preliminary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10490 is ECL 10K compatible, 65536-words by 1-bit read/ write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: HM10490 Series 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM10490 is ECL 10K compatible, 65536-words by 1-bit read/ write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

icc3

Abstract: CXK5V16100TM
Contextual Info: CXK5V16100TM -85LLX/10LLX 65536-word x 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this

Contextual Info: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: H M 1 0 4 9 0 -1 5 Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory H M 10490-15 is E C L 10k com patible, 65536-w ords x 1-bit, read/write random access m em ory developed fo r high speed sys­ tems such as m ain mem ories fo r super computers.

Contextual Info: HM6708 Series 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM The H M 6 70 8 Series has been converted to the H M 6 70 8A Series. The new A Series is com ­ pletely compatible with the non-A Series. Please refer to the specification comparison below to assist in your conversion.

101490

Contextual Info: HM101490 Series — Pre lim in ary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101490 is EC L 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

HM6709AJP-15

Abstract: HM6709AJP-20
Contextual Info: HM6709A Series 65536-word x 4-bit High Speed Static Random Access Memory Features 65536-words × 4 bit organization Fully TTL compatible input and output 1.0 µm Hi-BiCMOS process +5 V single supply Completely static memory No clock or timing strobe required

Hb203

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM S1E D 44^203 GGlfiOOV 0 7 5 • HM6709A S e rie s - • Preliminary W6 65536-Word x 4-Blt High Speed Static RAM - 2 3 ■ FEATURES • 65536-words x 4 bit organization • Fully TTL compatible input and output • 1.0/tm Hi-BiCMOS process

Contextual Info: HM101504F-10/12 — Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory • PIN ARRANGEMENT ■ DESCRIPTION 32 □ CS The HM101504 is ECL 100K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: HM10504-10/12 •Preliminary 65536-Words x 4-Bit Fully Decoded Random Access Memory ■ DESCRIPTION The HM10504 is ECL 10K compatible, 65536-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.