FA01317 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)

Contextual Info: bSM'îflS'î 001Ô071 MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì SO FA01317B G aA s F E T H Y B R ID 1C DESCRIPTION F A 0 1 3 1 7 is RF Hybrid IC designed fo r 1 .5 G H z band small size hand held radio. FEATURES • High efficiency 3 5 % • High po w er 3 0 . 5 (dBm )

f7108

Abstract: FA01317 F7132P F7122
Contextual Info: • GaAs FET MODULE FOR HANDY PHONE Max. ratings Application Type No. Po min Va (V) v« (V) h (A) mm max min max (V) Vn (V) f(M H ï) % Stad P in Hanw (max) (min) (dB) ( - ) VT TciOP) CC) (min) Pin (dBm) (dBm) (% ) FAQ13I4 1 7 1 0 - 1785MHz,32.5dBm Power AMP. PCN