647 TRANSISTOR Search Results

A115G

Abstract: 94S-525-A115G DTA115GKA DTA115GUA DTC115GKA DTC115GUA c115g
Contextual Info: Transistors DTA115GUA / DTA115GKA DTC115GUA / DTC115GKA 94S-525-A115G (94S-647-C115G) 471

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

G104039LF

Abstract: Fairchild SOT-23 2N7002 N Channel Mosfet SOT-23 12W SOT-363 mosfet 120 volt dimmer circuit with triac R11 SOP4 NEC SLUU435B TPS92210EVM-647 varistor mv-12 dual channel triac optocoupler
Contextual Info: Using the TPS92210EVM-647 User's Guide Literature Number: SLUU435B September 2010 – Revised December 2010 User's Guide SLUU435B – September 2010 – Revised December 2010 Natural PFC LED Lighting Driver Controller 1 Introduction The TPS92210EVM-647 evaluation module is a constant current TRIAC dimmable LED driver. It can drive

8D649

Abstract: 8D648 BD646
Contextual Info: K MAGNA Yffiffi 8D645; 647 BD6a9; 651 SILICONDARLINGTON POWERTRANSISTORS N-P-Nepitaxialbasetransistorsin monolithic Darlingtoncircuit for audiooutput stagesand general amplifierand switchingapplications;fO-22Oplasticenvelope. P-N-Pcomplements are BD646,8D648,

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

Contextual Info: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening

BD648

Abstract: BD650 BD646 BD652
Contextual Info: SavantIC Semiconductor Product Specification BD646/648/650/652 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

IC 651

Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Contextual Info: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a

BD649

Abstract: BD647 BD645 BD651 IC 651 PC 649
Contextual Info: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

BD645

Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646
Contextual Info: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

transistor bd650

Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
Contextual Info: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.

ic timer relay

Abstract: 12V Timer RELAY WT2223
Contextual Info: R&E International, Inc. 647 Clark Avenue, King of Prussia, PA 19406 WORLDTRONICS INTERNATIONAL CLOCK TIMER Specification number: RE222 I.C. Identification number: WT2223 Designed for use in oven ranges the RE222 can be used in a variety of AC power supply clock timer applications.

Contextual Info: 3 H A R R IS fCL644/645/646/647 ICL7644/7645/7646/7647 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-DC converters designed for operation from very low input voltages. All control functions and a power FET are contained in the ICL644, ICL645 and

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

MAX2XX

Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647
Contextual Info: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,

hp ms 7647

Abstract: harris 7644 la 7646 764X ICL764X 187Ly 7646 7647
Contextual Info: S i. It 2 >991 IC L 6 4 4 /6 4 5 /646/647 IC L 7 6 4 4 /7 645/7646/7647 2 HARRIS July 1991 Low V o lta g e S te p -U p C o n verters F e a tu re s D e s c rip tio n • +5V @ 40mA From a Single Cell Battery The ICL644, IC L645 and IC L646 are low pow er fixed +5V

2n2222 -331 transistors

Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

B0645

Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851
Contextual Info: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

TYP 513 309

Abstract: philips fr 310 PXTA14 PMBTA64 Philips Semiconductors Selection Guide BST60 PDTA143 PMBTA14 2PD601A PDTA144
Contextual Info: Philips Semiconductors Surface mounted transistors Selection guide GENERAL PURPOSE APPLICATIONS hFE TYPE NUMBER V CEO •c V (mA) fr Plot (mw) min. max. typ (MHz) PAGE NPN BC817 45 500 250 100 600 200 159 BC818 25 500 250 100 600 200 159 BC846 65 100 250

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching