6264 8K Search Results

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

Contextual Info: H Y 6264 A-I S e r ie s •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION Tiie HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

6264 SRAM

Abstract: SRAM 6264
Contextual Info: UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ ‘•Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns MAX. * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply.

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

2M X 32 Bits 72-Pin Flash SO-DIMM

Abstract: AN2131QC Triton P54C SO-DIMM 72pin 32bit 5V 2M AN2131-DK001 AN2131SC vhdl code for pipelined matrix multiplication VIC068A user guide parallel interface ts vhdl 7C037
Contextual Info: GO TO WEB MAIN INDEX 3URGXFW 6HOHFWRU *XLGH Static RAMs Organization/Density Overview Density X1 X4 X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 4 Kb 16 Kb 7C167A 7C168A 7C128A 6116 64 Kb to 72 Kb 7C187 7C164 7C166 7C185 6264 7C182 256 Kb to 288 Kb 7C197 7C194

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 6264-25 Product Preview 8 K x 8 Bit Fast Static R A M The MCM6264-25 is a 65,536 brt static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CMOS technology.

m6264

Abstract: Truth Table 7483 SOP-28L UM6264-10 UM6264 UNITED MICROELECTRONICS CORPORATION UM6264-12L um6264-12 UM6264K-10L
Contextual Info: 2ûS-l% ^ UM 6264 Seríes 8KX 8 CMOS SRAM Lu-f ¿ » a f e ^ - a i Features • ■ ■ ■ ■ ■ Single + 5 v o lt pow er supply Access times: 7 0 /1 0 0 /1 2 0 ns m ax. Current: Standard version: O perating: 9 0 m A (m ax.)

VOGT A8

Abstract: vogt a3 ic 6264 vogt E7
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M CM 6264 Product Preview 8 K x 8 B it F as t S ta tic R A M The M CM6264 is a 65,536 b it static random access memory organized as 8192 w ord s of 8 bits, fabricated using M otorola's second-generation high-perform ance silicon-gate

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

CI 6264

Abstract: EK6264 6264 SRAM
Contextual Info: EK6264 £ U R t ;<a 8K x 8 Bit CMOS SRAM Low Power and Low Low Power Features • Low Low Power 1 mA CMOS Standby from 0 to +40 °C • Low Operating Current 35mA at Min Cycle • Address Access Times 35ns, 55ns, 70ns, 100ns • Single 5V ±10% Power Supply

STATIC RAM 6264

Abstract: RAM 6264 6264 EPROM 6116 RAM 6116H 6264 RAM 6264 cmos ram 6264 static RAM rom 6116 6116 static RAM 150ns
Contextual Info: "SILICON I N T E G R A T O ETE D BssaaflT oaaaoio 7 ‘T-mp-a.s- CMOS STATIC RAM SIS 6116/SIS 6116H 2Kx8 High Speed CMOS Static RAM FEATURE •Single + 5V supply and high density 24 pin package •Access Time: 3 d / 45/55/70ns Max. SIS 6116H 100/120/150ns Max. (SIS 6116)

ram 6264

Abstract: motorola 6264 ram M193 MCM6264C 6264 6264* ram 6a3t
Contextual Info: M O T O R O L A SC M E M O R Y / A S I C b 3 b 7 5 S l 0 0 0 0 1 3 0 3 M .H0T3. MhE D .T -to -JS -J ? MCM6264C 8K x 8 Bit Fast Static RAM PIN ASSIGNMENT NC [ 1 • A12 [ 2 PIN NAMES A0-A12 .Address Input DQ0-DQ7 . . . . . . . . . . Data Input/Output

GR881-H

Abstract: STATIC RAM 6264 6264 ram RAM 6264 6264 cmos ram 6264 8k GR88-H1
Contextual Info: GR881-H 8K x 8 NON-VOLATILE RAM GR881-H (8K x 8) NON-VOLATILE RAM READ CYCLE > Address < CE t OH > t ACC > < tACS > tOLZ t> < <CLZ> DOUT < > t OHZ > WRITE CYCLE 1 t WC < Read Cycle Parameter Read cycle time Access time CE to output valid OE to output valid

49LF002A

Abstract: 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A
Contextual Info: WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

Contextual Info: PRELIMINARY CYPRESS 6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription

M6264

Abstract: MCM6264 MCM6264J35 MCM6264P motorola 6264 ram MCM6264J30 MCM6284
Contextual Info: MO TOR OLA SC M EM ORY/ AS IC IME 0 I a3t>7S51 0070^15 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6264 8K x 8 Bit Fast Static RAM The MCM6264 Is a 66,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's high-performance silicon-gate CM OS technology.

AS6C6264

Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

AS6C6264

Abstract: AS6C6264-55PCN AS6C6264-55SIN 6264 28pin alliance AS6C6264 SRAM 6264 AS6C6264-55SCN CI 6264 as6c6264-55stin
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

6264 SRAM

Abstract: SRAM 6264 AS6C6264 6264 28pin AS6C6264-55PCN AS6C6264-55SCN
Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

SRAM 6264 application note

Contextual Info: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product

NVR8

Abstract: GREENWICH INSTRUMENTS
Contextual Info: GREENWICH 8K X 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • NVR8 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM No limit to number of programming cycles Fits standard 28-pin socket