60V1 Search Results

k 2545 MOSFET

Abstract: K2284 2SK2284 F15S6N
Contextual Info: 60VS/U-X /t9—MOSFET 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S Case : S T O -220 2SK2284 F15S6N 60V15 a T D ate code »s-)/ E IA J No. ro+O'I 10.2 - 0 2 @ 48 2.4+0.3 ' K2284 O.lio-1 ? LO o a c+0-3 0.74 ±0-2 G ate (D® D rain 0.6-0.1

g15s

Abstract: y158
Contextual Info: Schot t kyBar r i erDi ode T wi n •外観図 SG15SC6M OUTLI NE Package：FTO220G 60V15A （例） ロット記号 Date code t ：mm Uni 4.5 10 煙低 VF 煙低ノイズ 煙高速スイッチング 煙フルモールド 品名略号 Type No. 極性 Polarity

G10SC6M

Contextual Info: Schot t kyBar r i erDi ode T wi n OUTLI NE SG10SC6M Uni t mm Package FTO220G 3pi n 60V10A ロット記号 （例） Date code 4.5 10.０ 品名略号 Type No. Feat ur e 極性 Polarity 13.5 Tj =175° C 0000 G10SC6M ３.45 Tj = 15.０ 管理番号 （例）

G10SC6M

Abstract: g10sc6
Contextual Info: Schot t kyBar r i erDi ode T wi n •外観図 SG10SC6M OUTLI NE Package：FTO220G pi n） （3 60V10A ロット記号 （例） Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. Feat ur e 極性 Polarity 13.5 煙 Tj =175° C 0000 G10SC6M ３.45 煙 Tj

Contextual Info: 電流制御型 KP シリーズ 面実装品（SMD） TSS KP SERIES •外形寸法図 OUTLINE DIMENSIONS KP10L06 2.5 4.0 ±0.3 10L 6 13 60V100A 2.0 ±0.1 Package : 2F 2.5 品名 クラス 6.1 ロット記号（例） ソルダリングパッドの参考パターン

U181

Abstract: KP10L06
Contextual Info: 電流制御型 KP シリーズ 面実装品（SMD） TSS KP SERIES •外形寸法図 OUTLINE DIMENSIONS KP10L06 2.5 4.0 ±0.3 10L 6 13 60V100A 2.0 ±0.1 Package : 2F 2.5 品名 クラス 6.1 ロット記号（例） ソルダリングパッドの参考パターン

2CS-42724

Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
Contextual Info: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRFP140R

Abstract: IRFP142R IRFP143R CI 6264 IRFP142 IRFP141R f 6267 9l 15a
Contextual Info: Rugged Power M _ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Num ber 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0 .0 8 5 0 and 0.110 N-CHANNEL ENHANCEMENT MODE

2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

IRF140R

Abstract: IRF141R IRF142R IRF143R
Contextual Info: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

AD5422 SPI Daisy Chain application note

Abstract: AD5410 jedec package MO-220-VJJD-2 resistance to Current Converter 0-20mA AD5412 AD5420 AD5422 MO-153AD
Contextual Info: Preliminary Technical Data Single Channel, 12-Bit, Serial Input, Current Source DAC AD5410 FEATURES GENERAL DESCRIPTION 12-Bit Resolution and Monotonicity Current Output Ranges: 4–20mA, 0–20mA or 0–24mA 0.1% typ Total Unadjusted Error TUE 5ppm/°C Output Drift

P9B10VN

Abstract: P9B11VN DIN 50016 P9B20VN P9B01VN BA9S242 P9XER4RA 080SP2 P9MSCZ0T95 P9EPE01
Contextual Info: Series P9 - Base mounting Standard control units Illuminated control units + = Push-button with flush cap Push-button Push-button mushroom head with raised cap + + Push-button emergency Selector switch push-twist to release mushroom head with positive break

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

IRFF121

Abstract: IRFF120 IRFF122 IRFF123
Contextual Info: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

1RF130

Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
Contextual Info: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors

18261

Abstract: IRFF130 IRFF131 IRFF132 IRFF133
Contextual Info: 3 |t | 3 û 75[]ô 1 0 0 1 0 2 5 e! b ~ 38 750 81 G E S O L I D S T A TE 0 1 E 18259 Standard Power M O S F E T s _ IRFF130, IRFF131, IRFF132, IRFF133 D File N um ber 1564 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: MBRS2045CT-Y thru MBRS20150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

b22d

Abstract: E5 SCREW CAP B15d 12V1 led lamp 230v 130V2 standard ul94v0 Transformer 110v 24v type st BA9S 24v led
Contextual Info: Lamps for Indicators Filament, LED Clusters Lamps Product Data Sheet 201/1 Issue 2 A comprehensive range of lamps designed for use with Tranilamp illuminated products. 6 6 6 6.5 12 24 24 28 28 50 60 60 130 mA 0.36 0.9 Flash 1.8 2.0 1.2 1.2 2.8 1.1 1.0 2.5

IRF530

Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Contextual Info: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V

OA 161 diode

Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
Contextual Info: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:

IRF510

Abstract: IRF510 MOSFET Irf510 mosfet circuit diagram MOSFET IRF510 IRF511 IRF511 MOSFET IRF512 RELAY HGS RF510 IRF513
Contextual Info: Standard Power MOSFETs- IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N -C H A N N EL E N H AN C E M E N T MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 3.5A and 4.0A, 60V-100V

Contextual Info: CONTA-CONNECT FDLI 2.5-4 Three-conductor functional terminals The new three-conductor functional terminals FDLI offer a wide range of functions and many different application possibilities at a width of 5.1 mm. Solid wires and flexible wires with wire-end ferrules can be inserted

BUZ90 equivalent

Abstract: B82724-J2182-N21 450 watt smps Design 10K275 FERRITES N67 TDA tda 7805 s10k300 THERMISTOR siemens CNY17-2 TV flyback ferrite ic 7805 TV
Contextual Info: Switched-mode power supplies for color TV sets Application Notes http://www.siemens.de/pr/index.htm Advantages of switched-mode power supplies Circuit description Fig. 1 depicts a common SMPS circuit for TV sets. It operates in the wide input voltage range from 90 to 280 V and delivers an output of 175 W for color TV sets with 29-inch screens. The selfoscillating flyback converter is controlled by a Siemens IC, the