600S0 Search Results

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. T-600S01 0.5 GHz to 1 GHz Broadband Coaxial ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

T-600S01

Contextual Info: Broadband Coaxial Isolators & Circulators T-600S01 0.5GHz to 1GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

T-600S01

Contextual Info: Broadband Coaxial Isolators & Circulators T-600S01 0.5 GHz to 1 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

Aeroflex ATC 600

Abstract: ATSC MSWSHB-020-30 RO4350B DVB-T Schematic MEST2G-020-15 mswsh-100-30 wifi antenna MSWSS-020-40 600S200JW
Contextual Info: Application Note AN55131B Design of LOW COST High Performance 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION Figure 1. This paper describes a 20 W SPDT switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as cellular GSM, CDMA, 3G and

a2324

Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Contextual Info: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,

Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats

AGRC10GM

Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Contextual Info: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor

Contextual Info: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •

Contextual Info: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar

SOF-26

Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

600S2R7BT250XT

Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency

600S4R7

Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

MCH18

Abstract: ZO13 0805HQ-5N6XJBB
Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

SZP-5026-HWD

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Aeroflex ATC 600

Abstract: 600s101 MSWSHB-020-30 600S150JW mswsh-100-30 mswsh-020-30 wifi antenna MEST2G-020-15 RO4350B 600S150J
Contextual Info: Application Note AN55132B Design of LOW COST High Isolation 20W and 50W Transmit and Receive Antenna Switches DESCRIPTION This paper describes a high isolation 20 W transmit and receive antenna switch for use in 500 MHz to 4 GHz wireless infrastructure applications such as

hp laptop charging CIRCUIT diagram

Abstract: hp laptop ac adapter schematics diagram xenon inverter circuits laptop Lithium-ion battery diagram schematic murata diplexer hp schematic diagram of laptop battery charging pins Self-Oscillating mobile charger LT1563-2 inverter charger radio trigger xenon flash
Contextual Info: LINEAR TECHNOLOGY VOLUME XII NUMBER 2 MAY 2002 IN THIS ISSUE… COVER ARTICLE LTC1733: Thermal Regulation Maximizes Lithium-Ion Battery Charging Rate Without Risk of Overheating . 1 Trevor Barcelo Issue Highlights . 2

diode C728

Abstract: RFP100200-4Y502 600S0R7BT CD 5888 IC JESD22-A114F RFP100200-4Y50-2 RFP-100200-4Y50-2 2A1306-3 PTMA210404FL R250
Contextual Info: PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.

murata diplexer

Abstract: HP8594E LDC21897M19D-078 PF08107B LDC21897M19D POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC4400 LTC4400-1 LTC4401 LTC4401-1
Contextual Info: DESIGN FEATURES ThinSOT RF Power Controllers Save Critical Board Space and Power in Portable RF Products by Ted Henderson and Shuley Nakamura Introduction The LTC4400-1 and LTC4401-1 provide RF power controller solutions for the latest cellular telephones. They

Contextual Info: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers