PTMA080302M Search Results

PTMA080302M Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTMA080302M		Infineon Technologies	700 MHz to 1000 MHz; Package: PG-DSO-20; Flange Type: Surface Mount; Matching: I/O; Frequency Band: 700.0 - 1,000.0 MHz; P_1dB (typ): 40.0 W; Supply Voltage: 28.0 V;	Original	PDF	445.72KB	11
PTMA080302MV1		Infineon Technologies	RF Amplifiers, RF/IF and RFID, IC AMP RF LDMOS 30W DSO-20	Original	PDF		11
PTMA080302MV1AUMA1		Infineon Technologies	RF/IF and RFID - RF Amplifiers - IC AMP GSM 700MHZ-1GHZ DSO20-63	Original	PDF	216.38KB

PTMA080302M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats	Original	ptma080302m 30-watt 20-lead pg-dso-20-63 +150-ohm	PDF
C4234 Abstract: 600S6R8CT GRM422Y5V106Z050AL PTMA080302M RO4350 Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation	Original	ptma080302m 30-watt 20-lead pg-dso-20-63 +550-ohm c4234 600s6r8ct grm422y5v106z050al ro4350	PDF
Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation	Original	ptma080302m 30-watt 20-lead pg-dso-20-63 +150-ohm	PDF
600F470 Abstract: 0647x GPS 9252 PG-DSO-20-6 Potentiometer 100 ohm Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats	Original	ptma080302m 30-watt 20-lead pg-dso-20-63 +650-ohm 600f470 0647x gps 9252 pg-dso-20-6 potentiometer 100 ohm	PDF
Class D RF amplifer Abstract: PTMA080302M Contextual Info: Preliminary PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation	Original	ptma080302m 30-watt 20-lead pg-dso-20 +2p-ssop-20 class d rf amplifer	PDF
Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats	Original	ptma080302m 30-watt 20-lead pg-dso-20-63	PDF
Infineon moisture sensitive package Contextual Info: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation	Original	ptma080302m 30-watt 20-lead pg-dso-20-63 +250-ohm infineon moisture sensitive package	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	pg-dso-20 pg-rfp-10 h-34265-8 h-33265-8 +15h-30248-2 h-36248-2 h-33288-2 h-31248-2 h-37248-2 h-34288-2 a1807 ptfa211801e h-32259-2 lt 860 ptfa071701gl ptfa072401fl 1800 ldmos 1805-1880 ptma210452m	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e pg-dso-20-63 +13pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 h-36260-2 ptfa142401el ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl ptfa080551e	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e 725-7452fl +13pg-dso-20-63 pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 ptfa220121m ptfb241402f ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF