DS110620 Search Results
DS110620 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor 2.4GHz amplifier schematic wifi
Abstract: schematic wifi board
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sza-204411b/gds110620sza2044zsq+5 | |
RF6650
Abstract: LQM2HPN2R2MG0L material declaration taiyo yuden smps dc-dc circuits Material Declaration MURATA
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rf6650650mads110620lqm2hpn2r2mg0l+3 | |
InP HBT transistor
Abstract: STA-5063Z AMPLIFIER 5GHZ wifi
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sta-5063z15dbmot-363itss110620+4 | |
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Contextual Info: SZM-2066Z SZM-2066Z 2.4GHz to 2.7GHz 2W Power Amplifier 2.4GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip |
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szm-2066z11b/gll1608fh4n7jds110620+3 | |
600S4R7
Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
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szp-5026zsof-26ds110620szp5026zsq+12 | |
vpc3 c
Abstract: RF transistor gain 20dB vpc3
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szm-3066zitds110620ds110620szm3066zsq+5 | |
MCH182CN104Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT |
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sza-3044ds110620sza3044zsqsza3044zsr+3 | |
BW030Contextual Info: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power>90W Advanced Heat-Sink Technology |
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rfg1m20090rf400-244dbm-35dbc+3 | |
dk39
Abstract: SZM-2166 szm2166 SZM2166ZSR 600S100JW250 12NXJBB 600S100 42 dbm 2.4GHz amplifier schematic
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szm-2166zbands21ds110620szm2166zsq+10 | |
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Contextual Info: RF6539 RF6539 915MHz Transmit/Receive Module 915MHz TRANSMIT/RECEIVE MODULE Package: 28-Pin, 5.5mmx5.0mm GND Features GND GND 27 26 25 24 VCC GND 28 VREG GND CONFIDENTIAL: NDA REQUIRED 23 1 GND 2 22 GND 21 GND 20 GND GND 3 TX Gain: 16.5dB GND 4 19 GND |
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rf6539915mhz28-pin22dbm+1 | |
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Contextual Info: STA-6033 Z STA-6033(Z) 4.9GHz to 5.9GHz 3.3V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier |
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sta-6033ds11062010milsta6033zsq+3 | |
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Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance |
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szp-2026zsof-2654mb/s26dbm+2 | |
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Contextual Info: SZM-3166Z SZM-3166Z 3.3GHz to 3.6GHz 2W Power Amplifier 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT |
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szm-3166zds110620szm3166zsqszm3166zsr+2 | |
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Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with |
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szp-3026zsof-26ds110620szp3026zsq+2 | |
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Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to |
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sga8343zsga8343zlowot-343ds110620+2 | |
600S100JW250X
Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
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szp-3026zsof-26ds110620szp3026zsq+8 | |
SZA-5044ZSR
Abstract: SZA5044Z
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sza-5044ds110620sza-5044zsza5044zsq+3 | |
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Contextual Info: RFDA0047 RFDA0047Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 400MHZ TO 2700MHZ Package: MCM 32-Pin, 7.0mm x 7.0mm Features Dual Channel VGA Frequency Range 400MHz to |
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rfda0047digitalrfda0047400mhz2700mhz+4 | |
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Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT |
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sza-3044ds110620sza3044zsqsza3044z+1 | |
SZP-2026Contextual Info: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology |
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szp-2026zsof-26ds110620szp2026zsq+3 | |
3.5GHz BJT
Abstract: cpe wimax
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szm-3166zds110620szm3166zsqszm3166zsr+4 | |
RF6505
Abstract: wifi antenna schematic QFN-20 RF6505 Murata WiFi
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rf650520-pin27dbm11b/g+4 | |
Material Declaration MURATAContextual Info: RF6650 POWER MANAGEMENT IC Package: 8-Bump WLCSP, 3x3 Array, 1.58mm x1.57mm Features VPWR C3 A1 RF6650 AGND High Efficiency >95% Transient Response <25s 650mA Load Current Capability Programmable Output Voltage Bypass FET |
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rf6650650mab440-57-5ds110620+1 | |
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Contextual Info: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT |
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sza-5044ds110620sza-5044zsza5044zsq+2 | |