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    600S100JW250X Search Results

    600S100JW250X Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    600S100JW250XT
    		American Technical Ceramics Ceramic Capacitors, Capacitors, CAP CER 10PF 250V 5% NP0 0603 Original PDF 6
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    600S100JW250X Price and Stock

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    Kyocera AVX Components 600S100JW250XT

    CAP CER 10PF 250V NP0 0603
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    DigiKey () 600S100JW250XT Digi-Reel 3,843 1
    • 1 $1.12
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    600S100JW250XT Cut Tape 3,843 1
    • 1 $1.12
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    600S100JW250XT Reel 3,500 500
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    Avnet Americas 600S100JW250XT Reel 12 Weeks 2,000
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    Mouser Electronics 600S100JW250XT 1,955
    • 1 $1.12
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    TTI 600S100JW250XT Reel 1,500 500
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    Richardson RFPD 600S100JW250XT 1,500
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    Kyocera AVX Components 600S100JW250XT4K

    MLC 600 - Tape and Reel (Alt: 600S100JW250XT4K)
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    Avnet Americas 600S100JW250XT4K Reel 12 Weeks 4,000
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    Mouser Electronics 600S100JW250XT4K
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    AMERICAN ATC600S100JW250XT

    CAPACITOR, CERAMIC, 250 V, C0G, 0.00001 uF, SURFACE MOUNT, 0603 (Also Known As: 600S100JW250XT)
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    Quest Components ATC600S100JW250XT 2,720
    • 1 $1.00
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    600S100JW250X Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOF-26

    Abstract: SZP-3026Z
    Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z EDS-104666 SZP-3026Z* SZP-3026Z-EVB1 SOF-26 PDF

    Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110 PDF

    SZP-3026Z

    Abstract: ma 529 SZP3026 SOF-26 3.5GHz BJT
    Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z DS091202 SZP3026Z* SZP3026Z-EVB1 ma 529 SZP3026 SOF-26 3.5GHz BJT PDF

    Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SOF-26 SZP-3026Z DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z PDF

    600S100JW250X

    Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
    Contextual Info: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with


    Original     		SZP-3026Z SZP-3026Z SOF-26 DS110620 SZP3026ZSQ SZP3026ZSR SZP3026Z SZP3026Z-EVB1 600S100JW250X 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK PDF

    Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features     RFPA3026 P1dB =33.6dBm at 5V RF IN 802.11g 54Mb/s Class AB Performance On-Chip Output Power Detector  Input Prematched to ~5


    Original     		RFPA3026 RFPA3026 54Mb/s 26dBm 570mA 27dBm 513mA DS120110 PDF