583 TRANSISTOR Search Results

IMD16A

Contextual Info: Transistors IMD16A 96-473-IMD16 583

ON Semiconductor marking 821

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

C2385

Abstract: transistor c2385 transistor c2385 Data Sheet Q62702-C2385
Contextual Info: BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23

583 transistor

Contextual Info: BCR 583 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2 =10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 583 XMs Pin Configuration 1=B 2=E Package

2N5303

Abstract: SPT5303 75 watt npn switching transistor
Contextual Info: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps

NPN general purpose silicon transistors

Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Contextual Info: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)

L0050A

Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
Contextual Info: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z

MD14 package

Abstract: md14 SPT6145 300VDC
Contextual Info: Solid State Devices Incorporated 14830 Valley View La Mirada, C alifornia 90638 SPT6145 Telephone 213 921-9660 T W X -9 10-583-4807 GENERAL INFORMATION: PNP High Voltage Transistor primarily used for amplifiers and switching circuits. Packaged in a MD14 Case.

Contextual Info: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage

2N5681

Abstract: 2N5682 SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF
Contextual Info: TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices Qualified Level 2N5681 JAN JANTX JANTXV 2N5682 MAXIMUM RATINGS TA = 25° C unless otherwise noted 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage

2N5682

Abstract: 2N5681 equivalent C-2688 MIL-PRF19500 2N5679 2N5681 JANTX2N5682 ST1113
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 21 November 1999. INCH-POUND MIL-PRF-19500/583A 21 August 1999 SUPERSEDING MIL-S-19500/583 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

Contextual Info: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Philip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES ANNOUNCES $23 MILLION CREDIT FACILITY TO BE BETTER POSITIONED FOR FUTURE GROWTH

SPT6502

Abstract: SPT6503 T066
Contextual Info: m i PRELIMINARY DATA SHEET 2 AMP HIGH VOLTAGE SPT6502 Solid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213} 921-9660 TW X -910-583-4807 * * * * FEATU RES HIGH SPEED SPT6503 NPN SILICON POWER TRANSISTOR 800V BLOCKING CAPABILITY

Contextual Info: SOLID STATE DEVICES INC 12E D |ö3t.bDll 0002077 t> | PRELIMINARY DATA SHEET SFT502 AND SFT504 <5^xrirjV| svs& m 'll 5 AMP HIGH SPEED NPN TRANSISTOR 200 VOLTS 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396

j201

Abstract: 2N5663 SFT6800 SFT6900
Contextual Info: Xoo SFT6900 = = ) Lie'll 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE W JEDECTO—5 FEATURES • • • • • • BVCEO TO 400 VOLTS LOW SATURATION VOLTAGE

Contextual Info: SOLI» STATE DEVICES INC Preliminary Data Sheet 12E D jô3btiDll GDDEQÛT S Jj SFT5659 15 AMR r- 33-0? 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 HIGH SPEED NPN TRANSISTOR 150 VOLTS CASE STYLE TO-59

Contextual Info: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

la 1213

Abstract: B2272 LS1500 SPT1010 SFT1010 SFT1012 SFT1014
Contextual Info: PRELIMINARY DATA SHEET Xno \^>5' SFT1010 SFT1012 SFT1014 100 AMP HIGH ENERGY NPN TRANSISTORS V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 100, 120, 140 VOLTS CASE STYLE R FEATURES T O -3 WITH .060 PINS

transistor scans sheet

Abstract: SFT501 SFT502 SFT503 SFT504 VC80 B178H
Contextual Info: XOQIH^ PRELIMINARY DATA SHEET SFT501 AND SFT503 5 AMP HIGH SPEED PNP TRANSISTOR 200 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396 FEATURES • • • • • • • •

Contextual Info: FOR IMMEDIATE RELEASE Joseph Liu Chief Financial Officer Diodes Incorporated 805 446-4800 Phillip Bourdillon/Ken Kline Corporate Communications KBL Associates, Inc. (818) 583-8091 DIODES REPORTS SECOND QUARTER RESULTS Westlake Village, California — July 26, 1996 — Diodes Incorporated (ASE: DIO)

2N5097

Abstract: 2N5092 2N5094 2N5095 2N5096 10cf
Contextual Info: X o i& U M UDII 2N5095 AND 2N5097 1 AMP HIGH VOLTAGE NPN TRANSISTOR 500-600 VOLTS CASE STYLE W JEDEC TO—5 I. P 330 .320 14830 Valley View Avenue La Mirada, California 90638 P. O. Box 577 La Mirada, California 90637 213 921-9660 TWX 910-583-4807 FEATURES

Contextual Info: SOLID STATE DEVICES INC 1SE D GOOEllb 1 | ~T~~33- 11 PRELIMINARY DATA SHEET SFT6900 3 AMP HIGH VOLTAGE PNP TRANSISTOR 500 VOLTS CASE STYLE W JEDECTO—5 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES

Contextual Info: » EVICES INC HE * 0002107 Q | PRFJ iIMINARY DATA SHEET ^ SFT2010 SFT2012 SFT2014 200 AMP HIGH ENERGY NPN TRANSISTOR V ceo 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 FA X 213-921-2396 100, 120, 140 VOLTS CASE STYLE R