5650V Search Results

SMD4532VP

Contextual Info: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / 5650V are low Rdc, higher current

SMD4532VP

Contextual Info: WIRE WOUND SMD CHIP INDUCTORS SMD 4532V / 5650V TYPE Shape and Size : Dimensions are in mm Features : Ordering information : ．Wire wound SMD inductors . SMD 4532 V P - 100 K ．Highly accurate dimensions and reliable . (1) ．SMD4532VP / 5650V are low Rdc, higher current

Contextual Info: flUALITY T E C H N O L O G I E S CORP S7E ]> O O O ^ Q ij 7 fl3 I ÖTY European “Pro Electron” Registered T y p e s - CNY31 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e

Contextual Info: HARRIS SEMICOND SECTOR 37E D M302E71 □ □ 5 7 S ciñ M I HAS Optoelectronic S p ecificatio n s- Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors T h e G E Solid S tate CNY32 is a gallium arsenide, infrared em itting

Contextual Info: 3875081 G E SOLID STATE 0 1E 19834 D Optoelectronic Specifications _ HA R R I S S Ef l l COND S E C T OR 43G2271 37E DDSTSTh I HAS Photon Coupled Isolator CNY31 Ga As Infrared E m ittin g D iode & NPN Silicon P h oto-D arlington A m plifier T he G E Solid S tate CNY31 is a gallium arsenide, infrared em itting

Contextual Info: European “Pro Electron” Registered T y p e s _ CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon pho to -D arlin g to n am plifier in a lowcost plastic package with lead spacing com patible to a dual

Contextual Info: European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator Ga As Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in fra re d em itting diode co u p led with a silicon p h o to tra n sisto r in a low-cost plastic

H15A1

Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

Contextual Info: SMD SERIES WIRE WOUND SMD CHIP INDUCTORS Applications : ．Communication infrastructures Including xDSL and mobile base stations. ．Onboard automobile equipment Including car audio and ECU systems. ．Audio-visual equipment including TVs and VCRs. ．Other electronic equipment including HDDs and ODDs.

Contextual Info: Power Inductor–SMT Type SMD SERIES WIRE WOUND SMD CHIP INDUCTORS Applications : 炽Communication infrastructures Including xDSL and mobile base stations. 炽Onboard automobile equipment Including car audio and ECU systems. 炽Audio-visual equipment including TVs and VCRs.

CNY32

Abstract: 5300V
Contextual Info: G E SOLID STATE 01 DE I 3S7S0fll 00nfl3fc. 1 I Optoelectronic Specifications - S 3 Photon Coupled Isolator CNY32 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors The GE Solid State CNY32 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a low-cost plastic

Contextual Info: European “Pro Electron" Registered Types CNY31 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T h e CNY31 is a g a lliu m a rs e n id e , in f r a r e d e m ittin g d io d e c o u p le d w ith a silic o n p h o to -D a rlin g to n a m p lifie r in a low c o st p la stic p a c k a g e w ith le a d s p a c in g c o m p a tib le to a d u a l

H15B1

Abstract: H15B2 H15B1-H15B2 SCR 131-6 H11B255 H11D2 H11C1 H13A2 photo interrupter module h13a1 4N38A
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0