514800 Search Results

Contextual Info: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M 514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the 514800A/ASL is OKI's CMOS silicon gate process

MSM514800E

Abstract: m 514800e
Contextual Info: 514800E-01 作成 ：1999 年 12 月 電子デバイス 暫定 M SM 514800E 524,288-Word x 8-Bit DYNAMIC RAM : 高 速 ペ ー ジ モ ー ド • 概要 514800E はCMOS プロセス技術を用いた 524,288 ワードx8 ビット構成のダイナミックラン

M514800A

Abstract: m514800
Contextual Info: 514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

hm514800clz7

Abstract: m514800c m514800cltt HM514800CZ HM514800CLZ HM514800CLZ-7 parameter hitachi vk 45
Contextual Info: 514800C/CL Series HM51S4800C/CL Series 524,288-w ord x 8-bit Dynam ic Random Access M em ory HITACHI The H itachi H M 514800C are CM OS dynam ic R AM o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. 514800C have realized higher density, higher performance and various functions by employing

Contextual Info: 514800C/CL Series HM51S4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory H I T A The H itachi H M 514800C are CM OS dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. 514800C have realized higher density, higher performance and various functions by employing

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Contextual Info: 514800A/AL, HM51S4800A/AL S 6N 6S Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi H M 514800A are C M OS dynamic RAM orga­ nized as 524,288-word x 8-bit. H M 514800A have realized higher density, higher performance and various functions by

Contextual Info: SIEMENS 512 K x 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time:

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

MSM514800A

Abstract: MSM514800ASL
Contextual Info: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514800A/ ASL is a 524,288-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The M SM 514800A/ASL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The M SM 514800A/ASL is

Contextual Info: SIEMENS 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization Low power dissipation max. 605 mW active -60 version max. 550 mW active (-70 version) max. 468 mW active (-80 version) • 0 to 70 "C operating temperature

HM514800JP8

Contextual Info: 514800 Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION H M 514800JP Series The Hitachi 514800 are CMOS dynamic RAM organized as 524,288-word x 8-bit. 514800 have realized higher density, higher performance and various func­

m514800

Abstract: D02fc 002B4 S4800 HM514800AJ-7 HM514800AJ-8 HM514800ALRR-7 HM514800ALRR-8 HM514800AZ-7 M514800A
Contextual Info: 514800A/AL Series HM51S4800A/AL Series Preliminary 5 2 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c c e s s M em ory T he H itach i H M 514800A are C M O S dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

HM514800

Contextual Info: 514800L Series Preliminary Low Power Version 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION H M 514800U P Series The Hitachi 514800 are CMOS dynamic RAM organized as 524,288-word x 8-bit. 514800 have realized higher density, higher performance and various func­

Contextual Info: SIEMENS 512 K X 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 Advanced Inform ation • 512 288 words by 8-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: 514800L Series Preliminary Low Power Version 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION HM 514800LJP Series The Hitachi 514800 are C M O S dynamic R A M organized as 524,288-word x 8-bit 514800 have realized higher density, higher performance and various func­

s14800

Abstract: 514800 ZIP28-P-400 MSM OKI 80 PIN
Contextual Info: O K I Semiconductor 514800/L 524,288-Word x 8-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The M SM 514800/L is a new generation dynam ic RAM organized as 524,288-word x 8-bit. The technology u sed to fabricate theM SM 514800/L is OKI's C M O S silicon gate process technology.

HYB514800BJ-60

Abstract: HYB514800BJ-70 HYB514800BJ-80 Q67100-Q849 Q67100-Q850 Q67100-Q851
Contextual Info: 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ˚C operating temperature • Fast access and cycle time RAS access time: 60 ns -60 version 70 ns (-70 version) 80 ns (-80 version) CAS access time:

Q67100-Q849

Abstract: Q67100-Q850 Q67100-Q851
Contextual Info: 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization • 0 to 70 ˚C operating temperature • Fast access and cycle time RAS access time: 60 ns -60 version 70 ns (-70 version) 80 ns (-80 version) CAS access time:

D055344

Contextual Info: S IE M E N S 512 K X 8-Bit Dynamic RAM Low Power 512 K x 8-Bit Dynamic RAM HYB 514800BJ-60/-70/-80 HYB 514800BJL-60/-70/-80 A d v a n c e d In fo rm a tio n • 512 288 words by 8-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time

Contextual Info: TOSHIBA 514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The 514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The 514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

toshiba 7 pin a215

Abstract: A227
Contextual Info: TOSHIBA 514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The 514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The 514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

sim 300 gsm module VR 0511

Abstract: nf schaltungen PEB 3164 pdsp 2113 halbleiter datenbuch star delta timer siemens siemens cpu 216-2 Siemens Optoelectronic ITT Semiconductors siemens fl 232 v7
Contextual Info: SIEMENS ICs for Communications DSP Oriented PBX Controller DOC PEB 20560 Version 2.1 Contents Overview Functional Block Description Operational Description DSP Core OAK Description of Registers Applications Electrical Characteristics Ordering Information and Mechanical Data

Contextual Info: 514800A/AL, HM51S4800A/AL Series Preliminary 524,288-Word x 8-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi 514800A are CM OS dynamic RAM orga­ nized as 524,288-word x 8-bit. 514800A have realized higher density, higher performance and various functions by