002B4 Search Results

Contextual Info: • bhSB'lBl 002b40b 407 « A P X N AUER PHILIPS/DISCRETE B B 212 b^E D A.M. VARIABLE CAPACITANCE DOUBLE DIODES The BB212 is a double 9V variable capacitance diode w ith common cathode in a plastic TO-92 variant. A special feature is the low tuning voltage which makes the device particularly suited to car and

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbS3^31 002b453 223 « A P X Philips Product specification BBY62 Double variable capacitance diode DESCRIPTION The BBY62 is a double variable capacitance diode in a

Contextual Info: BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT Integrated D evice Technology, Inc. IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 1024 x 9-Bit IDT72510

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

Contextual Info: 17313bS DDEbMMÔ S3R OPA655 BU RR - BROW N Wideband FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH • LOW INPUT BIAS CURRENT: 5pA The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing

37608

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4302271 OGEtMOLT-'ì BIHAS Radiation-Hardened High-Reliability IC s _ CMM5104/1RZ A O - - 2 18 - V DD 1 7 - A6 A Z - 3 16 -A 7 A3 - 4 1 5 -A8 - 5 M AS - 6 13 -A IO OUT - 7 12 - A11

Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

Contextual Info: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q

IRLL110

Contextual Info: PD 9.869A International Rectifier IRLL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching VDSS = 100V

Contextual Info: N AMER PHILIPS/DISCRETE • b*1E D bbS3T31 DQ2bmi 674 I Jl APX BB405B UHF VARIABLE CAPACITANCE DIODE The B6405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended for application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.

FW250

Contextual Info: Advance Data Sheet December 1996 m icroelectronics group Lucent Technologies Bell Labs Innovations FC250R1 Power Module: 18 Vdc to 36 Vdc Input; 28 Vdc Single Output; 250 W Features • Size: 61.0 mm 2.40 in. x 116.8 mm (4.60 in.) x 13.5 mm (0.50 in.) ■ Operating case temperature range:

pin diagram of 18 pin IC 8203

Abstract: FC250C1
Contextual Info: Advance Data Sheet December 1996 m ic ro e le c tr o n ic s group Lucent Technologies Bell Labs Innovations FC250-Series Power Modules: 18 Vdc to 36 Vdc Input; 250 W Features • Size: 61.0 mm 2.40 in. x 116.8 mm (4.60 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range:

Contextual Info: MITSUBISHI < DIGITAL ASSP> M 6 6 2 3 0 P /F P A2RT ADVANCED ASYNCHRONOUS RECEIVER & TRANSM ITTER DESCRIPTION The M 66230P/FP is an integrated circuit for asynchronous PIN CONFIGUP OP VIEW) serial data communications.it is used In combination with an 8-bit micro-processor and is produced using the silicongate C M OS technology.

IRF7102

Abstract: IOR 336 AN-994
Contextual Info: International '«»Rectifier PD 9.872A IRF7102 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V DSS= 5 0 V

R5F21368snfp

Abstract: 06B2D 0025DH 00285H
Contextual Info: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

06B2D

Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

06B2D

Abstract: p9530 0023AH 0025DH 00285H
Contextual Info: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of

R5F21368snfp

Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Contextual Info: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides

KS57C2616

Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Contextual Info: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and

m1-m7

Contextual Info: MITSUBISHI LSIs DRAM MODULE o«tUW«N^ V M O «' s» f 3 MH1M72BTJ-6.-7 FAST PAGE MODE 75497472-BIT(1048576-WQRD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1M72BTJ is 1048576-word x 72bit dynamic RAM module. This consists of eighteen industry standard 1M x 4

36B8

Contextual Info: MITSUBISHI LSIs {DRAM MODULE MH2M36BDJ-7,-8/ MH2M36BNDJ-7,-8 FAST PAGE MODE 75497472-BIT 2097152-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION The M H 2M 36B D J/B N D J is 2 0 9 7 1 5 2 -w o rd x 3 6 -b it dynamic R A M . This consists of eight industry standard

Contextual Info: 6 7 DRAWING MADE THIS IN DRAWING @ THIRD IS ANGLE U N P U B L IS H E D . COPYRIGH T 5 19 RELEASED BY AMP 2 3 4 O PR OJ EC TI ON FOR P U B L I C A T I O N INCORPORATED. ALL LOG ,19 INTERNATIONAL RIGHTS D I 5T AD RESERVED. 47 REV I 5 I 0 N 5 P F ZONE LTR DESCRIPTION

M514800A

Abstract: m514800
Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher