5116800 Search Results

AS712

Abstract: lco4 5116800
Contextual Info: SIEMENS 2 M X 8-Bit Dynamic RAM HYB 5116800AJ-50/-60/-70/-80 Advanced Information • 2097152 words by 8-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5116800AJ-50/-60/-70/-80 Advanced Information • 2097152 words by 8-bit organization • 0 to 70 -C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: O K I Semiconductor 5116800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 5116800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the 5116800 is OKI's CMOS silicon gate process technology.

514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Contextual Info: SIEM EN S Packing Information DRAMS in Tape & Reel Package Type Device Type Devices per Reel Tape Width P-SOJ-26/20-11» HYB 511000 HYB 514256 1500 24 mm P-SOJ-26/20-52’ HYB 514100 HYB 514400 1500 24 mm P-SOJ-28-2 HYB 514800 1000 24 mm & 32 mm P-SOJ-40-1

relay cross reference

Abstract: transmitter tube 807 capacitor cross reference 732 259-00 443 911 261 relay a62-0262 resistor cross reference 956 relay Belling cross reference free layout rod 456
Contextual Info: ABCD Catalog Number/Drawing Number Cross Reference Catalog Part Number A03-0100 A03-0105 A03-0113 A03-0114 A03-0115 A03-0117 A03-0123 A03-0125 A03-0127 A03-0129 A03-0130 A03-0135 A03-0136 A03-0141 A03-0148 A03-0155 A03-0156 A03-0157 A03-0158 A03-0159 A03-0160

n5117

Abstract: nn5117800
Contextual Info: N N 5 1 168 00A /N N 5 1 17 8 0 0 A s e r ie s F a s t P a g e M o d e C M O S 2 M x 8 b it D y n a m ic R A M _ _ N _ P _ N . W / / ^ a Preliminary Specification d e s c rip tio n The 5116800A/17800A series is a high performance CMOS Dynamic Random Access Memory orga­

DYNAMIC RAM CROSS REFERENCE

Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
Contextual Info: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform

Contextual Info: • ‘H Y U N D A I * HY5117800C,5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this

HYB514100BJ-70

Abstract: L-SIM-30-1 hyb 511
Contextual Info: Summary of Types SIEM ENS Summary of Types Type Ordering Code Package Description Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 067100-0519 Q67100-Q520 Q67100-Q521 Q67100-Q522 Q67100-Q523 Q67100-Q524 Q67100-Q525 Q67100-Q526 Q67100-Q527 Q67100-Q528 Q67100-Q529

Q67100-Q765

Abstract: 32200S-70 Q67100-Q470 94500S-70 514256B-80 Q67100-Q840 Q67100-Q914 Q67100-Q437 322120S-70
Contextual Info: SIEM EN S Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Type Ordering Code Page Q67100-Q512 Q67100-Q427 Q67100-Q428 Q67100-Q518 Q67100-Q519 Q67100-Q520 Q67100-Q526 Q67100-Q527 Q67100-Q524 Q67100-Q525 Q67100-Q521 Q67100-Q522

Contextual Info: •HYUNDAI H Y 5 1 17 8 0 0 B .H Y 5 1 16 8 0 0 B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is

hy5118160b

Contextual Info: 5V DIMM TYPE SIZE 8 -B y te 8M B As o f '96.3Q DESCRIPTION 1M X 64 PART NO. SPEED REF. ED O .SL H Y M 564104A X /TX 6 0 /7 0 /8 0 4K H Y 5 1 1616 4 B J /B T x 4 H Y M 564124A X /TX H Y M 5 6 4 1 00 N /T N IK H Y 5 1 1816 4 B J /B T x 4 F P M ,L 5 0 /6 0 /7 0

Bv 42 transistor

Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Contextual Info: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.