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    MSM51V17190 Search Results

    MSM51V17190 Datasheets (2)

    OKI Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MSM51V17190-70
    		OKI Semiconductor 1,048,576-word x 18-Bit Dynamic RAM, Fast Page Mode Type Scan PDF 296.65KB 6
    MSM51V17190-80
    		OKI Semiconductor 1,048,576-word x 18-Bit Dynamic RAM, Fast Page Mode Type Scan PDF 296.65KB 6

    MSM51V17190 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    e33a

    Contextual Info: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm51v17190576-word18-bit2048cycles/32m+1e33a PDF

    Bv 42 transistor

    Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
    Contextual Info: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm51v17190_576-word18-bitmsm51v17190+9cycles/32msbv 42 transistorci 576tsop5042-pinmsm51v17190-70msm51v17190-80oki package sojscans-0053100 PDF

    m51171

    Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


    OCR Scan     		msm51v17180576-word18-bitcycles/32ms+1m51171 PDF

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm51v16190576-word18-bitcycles/64ms+8bv 42 transistorm5116tsop5042-pin50-pinmsm51v16190-70msm51v16190-80tsqp28-p-400-k PDF

    MSM5117180-70

    Abstract: MSM5117180-80
    Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm5117180576-word18-bitcycles/32ms+2msm5117180-70msm5117180-80 PDF

    DD1750

    Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm5117900152-word152-wcycles/32m+632pinsoj32-p-4qo42pinsoj42-p-400b754240dd1750 PDF

    20 TI 54240

    Abstract: MSM51VI6180
    Contextual Info: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm51v16180576-word18-bitmsm51vi6180+2cycles/64ms20 ti 54240 PDF

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Contextual Info: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm5116900152-wordcycles/64ms32pin+6soj32-p-4qo42pin32-pinmsm5116900-70msm5116900-80b724e PDF

    m51171

    Abstract: m32AG M5116
    Contextual Info: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm5116180576-word18-bitcycles/64ms+3m51171m32agm5116 PDF

    42-PIN

    Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
    Contextual Info: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		msm51v16180576-word18-bitmsm51vi6180+5cycles/64ms42-pinmsm51v16180-70msm51v16180-80v16180 PDF