5116405 Search Results

hm5x1

Contextual Info: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC

D-50

Abstract: MSM5116405
Contextual Info: 作成 ：1999 年 5 月 電子デバイス M SM 5116405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5116405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

Contextual Info: 51164051 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-757A Z Rev. 1.0 Mar. 17, 1997 Description The Hitachi H M 51164051 Series is CMOS dynamic RAM organized 4,194,304-word X 4-bit. It employs the most advanced CMOS technology for high performance and low power. The H M 51164051 Series

MSM5116405

Abstract: MSM5116405A
Contextual Info: O K I Semiconductor M SM 5116405A _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5116405A achieves high integration, high-speed operation, and low-power

5117405BJ-50

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Nippon capacitors

Contextual Info: HB56U472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-715A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56U472E is a 4M

Contextual Info: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi 5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

5116405

Abstract: Nippon capacitors
Contextual Info: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module

5117405

Contextual Info: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi 5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The

Contextual Info: 5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi 5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

51w4260

Abstract: 51W4265C HM 338 262144-WORD
Contextual Info: Contents • L in e U p o f H ita c h i IC M e m o rie s . 7 • P a c k a g e In f o rm a tio n s .

Contextual Info: HB56U472E-6B/7B/8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline buffered 8 BYTE DIMM HITACHI ADE-203-554A Z Rev. 1.0 Jun. 11, 1996 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: HB56S864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-780A Z Rev. 1.0 May. 9, 1997 Description The H B56S864ES belongs to 8 B yte DIM M (Dual In-line Memory M odule) fam ily, and has been developed as an optimized main memory solution for 4 and 8 B yte processor applications.

5117405

Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO 5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

HYB3117405

Abstract: HYB5116405 HYB5117405 HYB3116405
Contextual Info: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO 5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ(L)/BT(L)-50/-60 HYB3117405BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature