5117405 Search Results

hm5x1

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

5117405

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The

k2624

Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

M5117405

Abstract: msm5117405a Q020G m51174
Contextual Info: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er

SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

THM324005BS

Contextual Info: TOSHIBA THM324005BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM 324005BS/BSG is a 4,194,304 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of T C 5117405BSJ on the printed circuit board. This m odule is optimized for application to the systems which

Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC

thm3640*5

Contextual Info: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for

5117405BJ-50

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

MSM5117405D

Abstract: MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Contextual Info: O K I Semiconductor T h is v e rs io n :A p r.1 999 M S M 5 1 1 7 4 0 5 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E T Y P E W ITH EDO D ESC R IP TIO N The M SM 5117405D is a 4,194,304-w ord x 4-bit dynam ic RA M fabricated in O ki’s silicon-gate CM OS

Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C

Nippon capacitors

Contextual Info: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A Z Rev.1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (H M 5117405)

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

300mil-wide trays

Abstract: Q67100-Q2156 Q67100-Q2157
Contextual Info: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117405B achieves high integration, high-speed operation, and low-power

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

5116405

Abstract: Nippon capacitors
Contextual Info: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

Contextual Info: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability

als31c

Contextual Info: SIEMENS 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time

marking wl3

Abstract: V53C517405A WL10 WL12 WL17
Contextual Info: MOSEL VITELIC V53C517405A 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C517405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70