WL17 Search Results

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

WH17

Abstract: BC118 VP2122 bc102 "SERIES MELPS 740" BC117 transistor BC118 bbc cs5 BC78 "MELPS 740"
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor BC137

Abstract: BC137 RE5RE50 24516 bc107 connections bc136 VP1127 transistor bc102 vp251 M37274EFSP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Q67100-Q1104

Abstract: Q67100-Q1105 Q67100-Q1106
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

P-SOJ-32-1

Abstract: TSOP-32 WL16
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

HYB3116165BSJ

Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

WL10

Contextual Info: Waveforms for 168pin DIMM Modules Unbuffered DRAM Modules tRC tRAS RAS V IH VIL tCSH V IH VIL tRAD tASR Address V IH VIL OE I/O Inputs tRAL tCAH tASC tASR Column Row Row tRCH tRAH WE tCRP tRSH tCAS tRCD CAS tRP tRCS tRRH V IH VIL tAA tOEA V IH VIL tCDD tDZC

BC118

Abstract: wl12 VP117 "SERIES MELPS 740" T56R VP1126 VP137 VP136 23C16 BC128
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking wl3

Abstract: V53C517405A WL10 WL12 WL17
Contextual Info: MOSEL VITELIC V53C517405A 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C517405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

5116 ram

Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

Contextual Info: 8M x 8-Bit Dynamic RAM 4k & 8k Refresh, EDO-version HYB 3164805J/T(L) -50/-60 HYB 3165805J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time

Q67100-Q1192

Abstract: WL3 MARKING BST60
Contextual Info: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

5117405

Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature

bt 330

Abstract: HYB3116405 HYB3117405 HYB3117405BJ 4Mx4 DRAM
Contextual Info: 3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT L -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 -60 -70 tRAC

V53C365405A

Abstract: WL10 WL12
Contextual Info: MOSEL VITELIC V53C365405A 3.3 VOLT 16M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C365405A 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (t PC) 16 ns

HYB3164165AT

Contextual Info: 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 (8k, 4k & 2k Refresh, EDO-Version) Advanced Information • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature

HYB3117405

Abstract: HYB5116405 HYB5117405 HYB3116405
Contextual Info: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ(L)/BT(L)-50/-60 HYB3117405BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

P-SOJ-32-1

Abstract: TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

Contextual Info: 256 K x 16-Bit EDO-DRAM HYB514175BJ -50/-55/-60 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh HYB514175BJL-50/-55/-60 Advanced Information • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time

V53C316405A

Abstract: WL10 WL12 WL15
Contextual Info: MOSEL VITELIC V53C316405A 3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C316405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

HYB3164165BT

Contextual Info: 4M x 16-Bit Dynamic RAM HYB 3164165BT L -40/-50/-60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) Preliminary Information • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature

bt 109 transistor

Abstract: 400B P-SOJ-32-1
Contextual Info: 8M x 8-Bit Dynamic RAM HYB 3164805BJ/BT L -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Premininary Information • 8 388 608 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

bt 109 transistor

Abstract: 400B 405B P-SOJ-32-1 3164405BJ 3164405b
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405BJ/BT L -40/-50/-60 HYB 3165405BJ/BT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

edo ram

Abstract: HYB3164165T-50 HYB3164165T-60 HYB3164165TL-50 HYB3165165T-50 HYB3165165T-60 hyb3165165 3164165
Contextual Info: 4M x 16-Bit Dynamic RAM 4k & 8k Refresh, EDO-version HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information • • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time