198MW Search Results
198MW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LTC2170C
Abstract: LTC2171C LTC2172-12 LTC2172C LTC2172I
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ltc2172-12/ltc2171-12/ltc2170-1212-bit65msps/40msps/+10 | |
LTC2171-12
Abstract: LTC2170C LTC2171C LTC2172-12 LTC2172C LTC2172I LTC2172IUKG-12#PBF QFN-40 thermal resistance
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ltc2172-12/ltc2171-12/ltc2170-1212-bit65msps/40msps/+13 | |
capacitor MAL 2051
Abstract: LTC2171-12 LTC2264-14 voltage stabilizer 15 amp wbc1-1lb 2053 A/D Converter Analog Marking Information LTC5527 MABA-007159-000000 QFN-52
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ltc2172-12/ltc2171-12/ltc2170-1212-bit65msps/40msps/+15 | |
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Contextual Info: LTC2192 LTC2191/LTC2190 16-Bit, 65Msps/40Msps/ 25Msps Low Power Dual ADCs DESCRIPTION FEATURES n n n n n n n n n n n n 2-Channel Simultaneous Sampling ADC Serial LVDS Outputs: 1, 2 or 4 Bits per Channel 77dB SNR 90dB SFDR Low Power: 198mW/146mW/104mW Total |
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ltc2192ltc2191/ltc219016-bit65msps/40msps/+6 | |
LTC2190C
Abstract: LTC2190I LTC2191C LTC2191I LTC2192 LTC2192C LTC2192I LTC2190 LTC2190IUKG LTC2191UKG
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ltc2192ltc2191/ltc219016-bit65msps/40msps/+15 | |
cq837Contextual Info: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36 |
OCR Scan |
364080as364080asgthm364080as/asgtc514100asj+5 | |
VOICE RECORDER IC
Abstract: VOICE RECORDER IC programming MN48V32080F
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mn48v32080f32mbit18page28byte+5 | |
SSOT23-6
Abstract: FAN5622 FAN5624UMPX fan5626 1910K FAN5624 FAN5626LX led driver SOT23 6pin boost
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fan5622fan5624fan5626fan5622/24/26+5 | |
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Contextual Info: June 1996 Revision 1.0 " D A T A S H E E T - FSA2UN3641- 60/70 J(G/S)-S 8MByte (2M x 36) CMOS DRAM Module - ECC General Description The FSA2UN3641-(60/70)J(G/S)-S is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, |
OCR Scan |
fsa2un3641-72-pinmb814400c-0017fi3ti | |
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Contextual Info: • li 6 INTEGRATED CIRCUIT TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V4400APL / AJ L / A SJ L / A Z L / AFTL / ATRL - 8 0 / 1 0 SILICON GATE CMOS TECH NICAL DATA TENTATIVE D A TA 1.048.576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION The TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL is the new generation dynamic RAM organized |
OCR Scan |
tc51v4400apltc51v4400apl/ajl/asjl/azl/aftl/atrltc51v4400apl/ajl/asjl/azl/300/35a+3 | |
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Contextual Info: - PRELIMINARY - February 1996 Edition 1.0 FUJITSU P R O D U C T PR O F IL E S H E E T MB81V4405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB81V4405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 |
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mb81v4405c-60/-70mb81v4405c024-bitsmb81v4405c-60+4 | |
MSM51V4400E
Abstract: MSM51V4400 MSM51V4400E-10 MSM51V4400E-70
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fedd51v4400e-01msm51v4400emsm51v4400msm51v4400e-10+1 | |
QFN-52
Abstract: LTC2265-12 LTC2265C 2265431 2263C
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ltc2265-12/ltc2264-12/ltc2263-1212-bit65msps/40msps/+10 | |
obsolete NICHIA, NSCW100Contextual Info: LM2794/LM2795 Current Regulated Switched Capacitor LED Supply with Analog Brightness Control General Description Features The LM2794/95 is a fractional CMOS charge-pump and regulator that provides four regulated current sources. It accepts an input voltage range from 2.7V to 5.5V and maintains a constant current determined by an external sense |
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lm2794/lm2795lm2794/95lm2794/5325khz+1 | |
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HY5117404BContextual Info: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF |
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hym536a814b8mx364mx36-bithy5117404b+3 | |
obsolete NICHIA, NSCW100
Abstract: LM2794 LM2794BL LM2794BLX LM2795 LM2795BL smd marking e5 rf BLP14 smd marking LOJ
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lm2794/lm2795lm2794/95lm2794/5325khz+9 | |
RP 178
Abstract: 270MBPS LMH0024 LMH0024MA gs9064 143Mbps smpte
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lmh0024259m/344m259msmpte143mbps+7 | |
LP01704-222M
Abstract: A997AS-3R3M LTC3560 LTC3560ES6 ltcfy
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ltc356025mhz800ma20mvp-p+8 | |
XC9572XL-TQ100
Abstract: plx vhdl code transistor smd bc rn 100LVEL14 PCI9054-AA50PI vhdl code digital cross connector cPCI 2mm PAD60CIR36D xc9572xl pin configuration SMD TN12
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pm5372pmc-1991247pmc-991247pmc-990713+10 | |
toshiba M12
Abstract: C53I Toshiba F1R Toshiba television Model TAC D024 TC514100ASJ tc514100a
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OCR Scan |
thm364080asthm364080asgthm364080as/asgtc514100asj+8 | |
LTC2170C
Abstract: LTC2171C LTC2172-14 LTC2172C LTC2172I LTC2172CUKG-14
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ltc2172-14/ltc2171-14/ltc2170-1414-bit65msps/40msps/+11 | |
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Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536400 Series 4M X 36-bit C M O S DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of thirty six HY514100 In 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM. |
OCR Scan |
hym53640036-bithy514100hym536400m+4 | |
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Contextual Info: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF |
OCR Scan |
hym5361600a16mx3616mx1361600a+6 | |
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Contextual Info: O K I Semiconductor MSM5 1V4400/SL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: FAST PAGE MODE TYPE D ESC R IP T IO N The MSM51V4400/SL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit configuration. The technology used to fabricate the MSM51V4400/SL is OKI's CMOS silicon gate |
OCR Scan |
1v4400/sl_576-wordmsm51v4400/sl576-w | |