T50P26 Search Results

Contextual Info: • li 6 INTEGRATED CIRCUIT TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC51V4400APL / AJ L / A SJ L / A Z L / AFTL / ATRL - 8 0 / 1 0 SILICON GATE CMOS TECH NICAL DATA TENTATIVE D A TA 1.048.576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION The TC51V4400APL/AJL/ASJL/AZL/AFTL/ATRL is the new generation dynamic RAM organized

MSM51V16400A

Contextual Info: O K I Semiconductor MSM51 V16400 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16400A is

Contextual Info: O K I Semiconductor MSM514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power