MSM5117400A Search Results

Contextual Info: O K I Semiconductor MSM5 1 17 4 0 0 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

MSM5117400

Abstract: MSM5117400A
Contextual Info: O K I Sem iconductor MSM5 1 1 7 4 0 0 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 17400 A 4,194,304-Word x 4-Bit D YNAM IC RAM : FAST PAGE M O DE TYPE D E S C R IP T IO N The MSM5117400A is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5117400A is O K I's C M O S silicon gate process technology.

Contextual Info: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

D020

Abstract: MSM5117400A bbh2
Contextual Info: O K I Semiconductor MSM5 1 17400 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

IC SEM 2004

Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

JIS-C-7022

Abstract: 2-1-16EIAJAB-6201 ic 353 JIS-C-7032 OKI g3 gs lead free EIAJ ED-4701 305 6201 xr MOS1-4-14 CCD MTBF JIS-C-7021
Contextual Info: J2S0001-27-Y4 作成：1998年 1月 前回作成：1996年 10月 まえがき 平素は沖半導体製品を御愛顧いただき、厚く御礼申し上げます。 急速な発展を遂げているエレクトロニクス産業におきまして、半導体製品の応用

playback recorder

Abstract: VOICE RECORDER IC MSM6788 MSM6789A MSM6789L MSM5116100A
Contextual Info: ¡ Semiconductor MSM6789A/6789L ¡ Semiconductor MSM6789A/6789L SBC Solid-State Recorder IC GENERAL DESCRIPTION The MSM6789A/6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the MSM6789A/6789L has a stand-alone mode and a microcontroller interface

VOICE RECORDER IC

Abstract: 761A3 voice activated recorder circuit voice recorder circuit VOICE RECORDER circuits MSM6788 MSM6789A MSM6789L
Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C G EN ER A L DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

igfet

Abstract: k 1413 FET AU4A mos memory 1984
Contextual Info: 第２章 半導体集積回路の信頼性 本文書は全 3 章にて構成される品質保証･信頼性ハンドブックの 第 2 章-（2）の部分となります。 目次 第２章 半導体集積回路の信頼性 1. 2. 3. 4. 半導体集積回路の信頼性 .