A535B05 Search Results
A535B05 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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utc 3845 D
Abstract: SIEMENS BST siemens eh8 t567 P-DSO-20 SIEMENS BST n 55 80
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v66100-m692-x-123shd5utc 3845 dsiemens bst+4 | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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t-75-37-07235b0582532n-tspl-cc-68+8 | |
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Contextual Info: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064 |
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13n05lspd13n05lp-t0252q67040-s4124+6 | |
3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
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fl23sbos0g04737bfx55q60206-x55+9 | |
BTS 433
Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
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fl235b05o-218ab/5e3sb05q67060-s6951-a2+6 | |
MSC SDA
Abstract: SDA9092 DS011 DD011
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pl-cc-68q67100-h8353535b05msc sda+3 | |
D1233Contextual Info: SIEMENS 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module HYS 64/72V8200GU HYS 64/72V16220GU 168 pin unbuffered DIMM Modules • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications |
OCR Scan |
64/72-bit64/72v8200gu64/72v16220gupc100-compatible+5 | |
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Contextual Info: êûD » • 6555b05 0 0 m cm a H M S I E G 88D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case Kds = 800 V /„ = 5 ,5 A ^DS on = 2 Î2 |
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6555b05235bqsfl235b05q014t47 | |
3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
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fl23sbos0g04737q60206-x55bfx55+10 | |
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Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0) |
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kmk0089-9fi53sbdsd74abb160vdo/9+5 | |
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Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability |
OCR Scan |
39s13620tq-6/-7/-8cycles/32 | |
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Contextual Info: • A23 SfciGS DDÔ17 3 Ü 7 ST SIEMENS PROFET BTS 734L1 Smart Two Channel Highside Power Switch Product Summary 43 5.0 . 34 Features Overvoltage Protection Vfcb AZ • • • • • Operating voltage Vbb(on) one two parallel 40 4.8 19 20 7.3 19 • |
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734l1bts734uml20x | |
3tb 50 siemensContextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4278 G Features • • • • • • • • • • • • Output voltage tolerance < ±2% Very low current consumption Separated reset and watchdog output Low-drop voltage Watchdog Adjustable watchdog activating threshold |
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q67006a9291p-dso-14-4aed01550+2 | |
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Contextual Info: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73, |
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t2332-xv12-p2-7600053sbofl235b05 | |
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
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peb2091pef2091013751tfle35b05+10 | |
C67078-A1104-A2Contextual Info: 6fiD D • 6555b05 Q O l t m a H M S I E 6 68D 14942 D 3 BUZ 221 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Drain-source voltage Voa = 800 V Continuous drain current /„ = 5 ,5 A Draln-source on-reslstance ^ D S o n = 2 £ i Description |
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6555b05c67078-a1104-a2fl535fe | |
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Contextual Info: Type ^bs b RdS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 iî ' TO-220 AB C67078-S1313-A3 Maximum Ratings Symbol Parameter Continuous drain current Tc = 9 fapuls rc = 25 'C 36 (AR ^AR £as Avalanche current,limited by 7]max Avalanche energy.periodic limited by |
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o-220c67078-s1313-a3s35bg5q133777+5 | |
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Contextual Info: LH1502, LH1512 SIEM EN S 1 Form A/B, C device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability. |
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lh1502lh151218-plnfl535t | |
DIODE SMD S44
Abstract: D1035
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q67000-a9303p-dip-16-5q67006-a9299p-dso-14-4+6 | |
TSOP 50 Package
Abstract: 3165160AT A42F TOSHIBA D 799 Q67100-Q1552 3166160AT
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16-bit3164160at3165160at3166160at+6 | |
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Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus) |
OCR Scan |
q67100-h5102e1414023sbg5 | |
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Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C |
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5116405bj5117405bj5116405bj-505116405bj-60+6 | |
A6 9008 ADM
Abstract: sem 2106 circuit diagram free sem 2106 sem 2106 24 pin sem 2106 diagram sem 2106 G1235 sem 2106 data set BC517A
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c517a80c517a/83c517a-5nl-2500s-164+10 | |
e1414
Abstract: siemens master drive circuit diagram Siemens pulse sequence
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25x26-525x26q67100-h5095q67100-h3253+6 | |