50V 0.2UF Search Results

JESD51-9

Abstract: LTM8025 345KHZ 8025 LGA-70
Contextual Info: LTM8025 36V, 3A Step-Down µModule Regulator FEATURES DESCRIPTION n The LTM 8025 is a 36VIN, 3A step down Module® converter. Included in the package are the switching controller, power switches, inductor and all support components. Operating over an input voltage range of 3.6V to 36V, the

Contextual Info: LTM8025 36V, 3A Step-Down µModule Regulator FEATURES n n n n n n n n n n DESCRIPTION Complete Step-Down Switch Mode Power Supply Wide Input Voltage Range: 3.6V to 36V Up to 3A Output Current Parallelable for Increased Output Current 0.8V to 24V Output Voltage

8025F

Abstract: JESD51-9 LTM8025 18v 1a transformer
Contextual Info: LTM8025 36V, 3A Step-Down µModule Converter FEATURES DESCRIPTION n The LTM 8025 is a 36VIN, 3A step down Module® converter. Included in the package are the switching controller, power switches, inductor and all support components. Operating over an input voltage range of 3.6V to 36V, the

Contextual Info: LTC3261 High Voltage, Low Quiescent Current Inverting Charge Pump DESCRIPTION FEATURES n n n n n n n 4.5V to 32V VIN Range Inverting Charge Pump Generates –VIN 60 A Quiescent Current in Burst Mode Operation Charge Pump Output Current Up to 100mA 50kHz to 500kHz Programmable Oscillator

lt0412

Contextual Info: LTC3261 High Voltage, Low Quiescent Current Inverting Charge Pump DESCRIPTION FEATURES n n n n n n n 4.5V to 32V VIN Range Inverting Charge Pump Generates –VIN 60 A Quiescent Current in Burst Mode Operation Charge Pump Output Current Up to 100mA 50kHz to 500kHz Programmable Oscillator

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

1N4148 SMD PACKAGE

Abstract: 1N4148 equivalent SMD 1N4148 sod123 Diode Equivalent 1n4148 1N4148 DL-35 equivalent for ZENER DIODE 1N4148 1N4148 SMD sot23 PACKAGE 1n4148 smd diode smd 1a 100v diode bridge Panasonic PPS film
Contextual Info: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. The power converter topology of the demo board consists of an input buck-boost stage and an output

1N4148 sod123

Abstract: 1N4148 equivalent SMD Diode Equivalent 1n4148 1N4148 SMD PACKAGE DL-41 package equivalent for ZENER DIODE 1N4148 Diode Equivalent 1n4148 bridge diode 1N4148 SMD 1N4148 DL-35 Panasonic PPS film
Contextual Info: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. A power converter of the demo board consists of an input buck-boost stage and an output buck stage.

MOSFET 50V 100A TO-220

Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

7N60

Abstract: OF 7N60 7n60 mosfet 7N60L 7N60L-TA3-T 7N60-TA3-T 7N60-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

2n60

Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

2N60B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1N60 MOSfet

Abstract: 1N60 diode 1N60-TM3-T 1N60 diode 1n60 1N60-TA3-T c25 diode to220 c25 mosfet 1N60L-TF3-T 1N60L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Power MOSFET Preliminary 3A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N70K-MK is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary Power MOSFET 10A, 750V N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a

12N60L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

12N60G

Abstract: 12N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability