50V 0.2UF Search Results

Contextual Info: LTM8025 36V, 3A Step-Down µModule Regulator FEATURES n n n n n n n n n n DESCRIPTION Complete Step-Down Switch Mode Power Supply Wide Input Voltage Range: 3.6V to 36V Up to 3A Output Current Parallelable for Increased Output Current 0.8V to 24V Output Voltage

Contextual Info: LTC3261 High Voltage, Low Quiescent Current Inverting Charge Pump DESCRIPTION FEATURES n n n n n n n 4.5V to 32V VIN Range Inverting Charge Pump Generates –VIN 60 A Quiescent Current in Burst Mode Operation Charge Pump Output Current Up to 100mA 50kHz to 500kHz Programmable Oscillator

Schottky Diode 40V 2A

Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Contextual Info: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

1N4148 sod123

Abstract: 1N4148 equivalent SMD Diode Equivalent 1n4148 1N4148 SMD PACKAGE DL-41 package equivalent for ZENER DIODE 1N4148 Diode Equivalent 1n4148 bridge diode 1N4148 SMD 1N4148 DL-35 Panasonic PPS film
Contextual Info: HV9906DB3 Off-Line PFC Current Source Controller Introduction Features The Supertex HV9906DB3 demo board is a power factor corrected PFC LED driver using the HV9906 IC. A power converter of the demo board consists of an input buck-boost stage and an output buck stage.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

1n60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 1   FEATURES TO-220F TO-220 DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

12N60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65A Power MOSFET 0.5A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N65A is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

1n60ag

Abstract: 1N60A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

4n60f

Abstract: 4N60P
Contextual Info: 4N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 4 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

MOSFET "CURRENT source"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

POWER MOSFET Rise Time

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

7N65A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand

586A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

DIODE 349

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

3n70

Abstract: pwm mosfet 3a 700v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70 Power MOSFET 3A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a