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Fluke Networks GLD-DSX-5000MI 1 YR GOLD SUPPORT DSX W/MULTIMOD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GLD-DSX-5000MI	Bulk			1	1 $2583.36 10 $2583.36 100 $2583.36 1000 $2583.36 10000 $2583.36	Buy Now
Fluke Networks GLD3-DSX-5000MI 3 YR GOLD SUPPORT DSX W/MULTIMOD
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DigiKey	GLD3-DSX-5000MI	Bulk			1	1 $7034.69 10 $7034.69 100 $7034.69 1000 $7034.69 10000 $7034.69	Buy Now
Fluke Corporation GLD-DSX-5000MI Software 1 YR GOLD SUPPORT DSX W/MULTIMODE OLTS INSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GLD-DSX-5000MI					1 $2795.85 10 $2795.85 100 $2795.85 1000 $2795.85 10000 $2795.85	Get Quote
Onlinecomponents.com	GLD-DSX-5000MI					1 $2949.03 10 $2753.90 100 $2753.90 1000 $2753.90 10000 $2753.90	Buy Now
Fluke Corporation GLD3-DSX-5000MI Software 3 YR GOLD SUPPORT DSX W/MULTIMODE OLTS INSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GLD3-DSX-5000MI					1 $7613.30 10 $7613.30 100 $7613.30 1000 $7613.30 10000 $7613.30	Get Quote
Onlinecomponents.com	GLD3-DSX-5000MI					1 $7613.29 10 $7386.61 100 $7386.61 1000 $7386.61 10000 $7386.61	Buy Now
ODU Steckverbindungssysteme Gmbh & Co Kg 700.097.007.215.000 (MINI-SNAP SERIES) Protective Cover For Odu Mini-Snap Series B And F Ip68 Receptacles Size 0 - With Polyamide Lanyard With Loop Rohs Compliant: Yes \|Odu-Usa 700.097.007.215.000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	700.097.007.215.000 (MINI-SNAP SERIES)	Bulk	25		1	1 $32.96 10 $29.47 100 $26.68 1000 $26.68 10000 $26.68	Buy Now

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5000MI Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD2642 Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687 Contextual Info: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max	Original	2SD2642 100max 110min 5000min 60typ 55typ O220F) 2SB1687) 2SD2642 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687	PDF
2SD2641 Abstract: 2SB1685 Contextual Info: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA	Original	2SD2641 2SB1685) 100max 110min 5000min 60typ 55typ 2SD2641 2SB1685	PDF
Contextual Info: r Pin 1 \ □ □ □ □ □ □ □ □ □ MATERIAL 2.00 Insulator : 30% Glass fib e r PBT C o n ta ct Pin : Brass SPECIFICATION C urrent Rate : 1 AMP Insulation Resistance : 5000MiJMin. a t DC 500V C o n ta ct Resistance : 20m flM ax. a t DC 100m A D ielectric Voltage : AC 500V fo r one m inute	OCR Scan	5000MiJMin. M-R126-lXxx	PDF
2SD2560 Abstract: 2SB1647 DSA0016513 Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA	Original	2SD2560 2SB1647) MT-100 100max 150min 5000min 70typ 120typ 2SD2560 2SB1647 DSA0016513	PDF
2SB1570 Abstract: 2SD2401 Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO 2SB1570 Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)	Original	2SB1570 2SD2401) 100max 150min 5000min 50typ 230typ 2SB1570 2SD2401	PDF
2SD2562 Abstract: 2sb1649 Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C	Original	2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2sb1649	PDF
2SB1625 Abstract: 2SD2494 Contextual Info: 7 0 Ω E 2SB1625 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) –110 VEBO IC ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –110min V –6 A hFE VCE=–4V, IC=–5A 5000min∗ IB –1	Original	2SB1625 2SD2494) FM100 100max 110min 5000min 100typ 110typ 2SB1625 2SD2494	PDF
2SD2642 Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686 Contextual Info: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗	Original	2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686	PDF
Contextual Info: \|— 2.50 MATERIAL Insulator : 30% Glass fiber PBT Contact Pin : Brass Pin 1 SPECIFICATION Current Rate : 3 AMP Insulation Resistance : 5000MilMin. at DC 500V Contact Resistance : 20mQMax. a t DC 100mA Dielectric Voltage : AC 500V fo r one m inute Operation Temperature : — 40'C to + 105’C	OCR Scan	5000MiMn. 20m0Max. 100mA	PDF
Contextual Info: NOTES: 1 .MATERIALS 1.1 lnsulator:PBT 3 0 % Glass Fiber U L - 9 4 V - 0 1.2 Contact: Brass, Tin Plated 1.3 Spring Tole: Nickel Plated 2.SPECIFICATI0NS 2.1 Current Rating: 1Amp 2.2 Dielectric Strength: AC 1000V/min.R.M.S. 2.3 Insulator Resistance: 5000Milm in. at 500V DC	OCR Scan	000V/min 5000Milm DJ-MS-05	PDF
Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA	Original	2SD2589 100max 110min 5000min 60typ 55typ 2SB1659) FM-25	PDF
2SD2439 Abstract: 2SB1588 Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA	Original	2SD2439 2SB1588) FM100 100max 150min 5000min 55typ 95typ 2SD2439 2SB1588	PDF
2SD2390 Abstract: 2SB1560 Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max	Original	2SD2390 2SB1560) MT-100 100max 150min 5000min 55typ 95typ 2SD2390 2SB1560	PDF
2SD2560 Abstract: 2SB1647 2sd25 Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)	Original	2SD2560 2SB1647) 100max 150min 5000min 70typ 120typ MT-100 2SD2560 2SB1647 2sd25	PDF

2SD2562 Abstract: 2SD256 2sb1649 Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C	Original	2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2SD256 2sb1649	PDF
2SB1560 Abstract: 2SD2390 DSA0016506 Contextual Info: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Ratings Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB	Original	2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 DSA0016506	PDF
2SB1570 Abstract: 2SD2401 DSA0016506 Contextual Info: 7 0 Ω E 2SB1570 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Symbol ICBO Ratings Unit –100max µA 24.4±0.2 VEB=–5V –100max µA –150min V hFE VCE=–4V, IC=–7A 5000min∗ VCE(sat) IC=–7A, IB=–7mA –2.5max V W VBE(sat)	Original	2SB1570 2SD2401) 100max 150min 5000min 50typ 230typ MT-200 2SB1570 2SD2401 DSA0016506	PDF
2SB1647 Abstract: 2SD2560 DSA0016506 Contextual Info: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA	Original	2SB1647 2SD2560) 100max 150min 5000min 45typ 320typ MT-100 2SB1647 2SD2560 DSA0016506	PDF
transistor 2SD2389 Abstract: 2SD2389 2SB1559 Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max	Original	2SD2389 2SB1559) MT-100 100max 150min 5000min transistor 2SD2389 2SD2389 2SB1559	PDF
2SB1560 Abstract: 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560 Contextual Info: 7 0 Ω E 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) 2SB1560 Unit ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V V V(BR)CEO IC=–30mA –150min –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB	Original	2SB1560 2SD2390) MT-100 100max 150min 5000min 50typ 2SB1560 2SD2390 equivalent 2SD2390 Silicon Pnp Epitaxial Planar Transistor 2sb15 Sanken Electric 2SB1560	PDF
2SB1647 Abstract: 2SD2560 2SD256 Contextual Info: 7 0 Ω E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) VCB=–150V –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA	Original	2SB1647 2SD2560) 100max 5000min 45typ 320typ 150min 2SB1647 2SD2560 2SD256	PDF
IE5A Abstract: Transistor 2Sd2589 2SD2589 2SB1659 Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA	Original	2SD2589 2SB1659) FM-25 100max 110min 5000min 60typ 55typ IE5A Transistor 2Sd2589 2SD2589 2SB1659	PDF
2SB1648 Abstract: 2SD2561 2sd25 Contextual Info: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB	Original	2SD2561 2SB1648) 100max 150min 5000min 70typ 120typ MT-200 2SB1648 2SD2561 2sd25	PDF
transistor 2sb1624 2sd2493 Abstract: 2SB1624 2SD2493 Contextual Info: 7 0 Ω E 2SB1624 VCEO –110 VEBO –5 IC –6 IB –1 PC Tj Unit ICBO VCB=–110V –100max µA V IEBO VEB=–5V –100max µA V V(BR)CEO IC=–30mA –110min V A hFE VCE=–4V, IC=–5A 5000min∗ A VCE(sat) IC=–5A, IB=–5mA –2.5max 60(Tc=25°C)	Original	2SB1624 MT-100 100max 110min 5000min 100typ 110typ transistor 2sb1624 2sd2493 2SB1624 2SD2493	PDF

5000MI Search Results

5000MI Price and Stock

Fluke Networks GLD-DSX-5000MI

Fluke Networks GLD3-DSX-5000MI

Fluke Corporation GLD-DSX-5000MI

Fluke Corporation GLD3-DSX-5000MI

ODU Steckverbindungssysteme Gmbh & Co Kg 700.097.007.215.000 (MINI-SNAP SERIES)

5000MI Datasheets Context Search

2SD2642

2SD2641

2SD2560

2SB1570

2SD2562

2SB1625

2SD2642

2SD2439

2SD2390

2SD2560

2SD2562

2SB1560

2SB1570

2SB1647

transistor 2SD2389

2SB1560

2SB1647

IE5A

2SB1648

transistor 2sb1624 2sd2493