4M FP DRAM Search Results

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

HY5V56DF

Contextual Info: HY5V56D L/S FP Revision History No. 0.1 History Defined Target Spec. Rev. 0.1 / Jan. 2005 Draft Date Remark May 2003 1 HY5V56D(L/S)FP Series 4 Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The HY5V56D(L/S)FP is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which

HMD8M36M6

Abstract: HMD8M36M6G
Contextual Info: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a

Contextual Info: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D

c60 equivalent

Abstract: dram 4mx4 kmm5364
Contextual Info: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C

Hitachi DSA00164

Contextual Info: HM514260D Series HM51S4260D Series 4M FP DRAM 256-kword 16-bit 512 refresh ADE-203-510C (Z) Rev. 3.0 Nov. 17, 1997 Description The Hitachi HM514260D Series, HM51S4260D Series are CMOS dynamic RAMs organized as 262,144word x 16-bit. HM514260D Series, HM51S4260D Series have realized higher density, higher performance

HM51

Abstract: HM514260DJ-6 hm514260dj-7 HM514260DJ6
Contextual Info: HM514260D Series HM51S4260D Series 4M FP DRAM 256-kword 16-bit 512 refresh ADE-203-510C (Z) Rev. 3.0 Nov. 17, 1997 Description The Hitachi HM514260D Series, HM51S4260D Series are CMOS dynamic RAMs organized as 262,144word x 16-bit. HM514260D Series, HM51S4260D Series have realized higher density, higher performance

Contextual Info: HM514260D Series HM51S4260D Series 4M FP DRAM 256-kword 16-bit 512 refresh HITACHI ADE-203-510C (Z) Rev. 3.0 Nov. 17, 1997 Description The Hitachi HM514260D Series, HM51S4260D Series are CMOS dynamic RAMs organized as 262,144word X 16-bit. HM514260D Series, HM51S4260D Series have realized higher density, higher performance

4M FP DRAM

Abstract: Hitachi DSA00164
Contextual Info: HM514400D Series 4M FP DRAM 1-Mword x 4-bit 1k refresh ADE-203-679A (Z) Rev. 1.0 Nov. 13, 1997 Description The Hitachi HM514400D is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400D has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process

Contextual Info: HB56TW432D/HB56TW433D Series 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M x 4 Components HITACHI ADE-203-732C (Z) Rev. 3.0 Jan. 23 1998 Description The HB56TW432D is a 4M x 32 dynamic RAM Small Outline Dual In-line Memory Module

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56TW432D/HB56TW433D Series 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M × 4 Components ADE-203-732C (Z) Rev.3.0 Jan. 23 1998 Description The HB56TW432D is a 4M × 32 dynamic RAM Small Outline Dual In-line Memory Module

HB56TW432D

Abstract: HB56TW432D-6 HB56TW432D-6L HB56TW432D-7 HB56TW432D-7L HB56TW433D HM51W16400 HM51W17400 Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56TW432D/HB56TW433D Series 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M × 4 Components ADE-203-732C (Z) Rev.3.0 Jan. 23 1998 Description The HB56TW432D is a 4M × 32 dynamic RAM Small Outline Dual In-line Memory Module

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages

HMD8M32M4

Abstract: HMD8M32M4G R1571
Contextual Info: HANBit HMD8M32M4G 32Mbyte 8Mx32 72-pin SIMM, FP Mode, 4K Ref. 5V Part No. HMD8M32M4, HMD8M32M4G GENERAL DESCRIPTION The HMD8M32M4 is a 8M x 32bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 0.22uF

Nippon capacitors

Contextual Info: H B 5 6 T W 4 3 2 D /H B 5 6 T W 4 3 3 D S e r ie s 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M x 4 Components HITACHI ADE-203-732B (Z) Rev.2.0 Nov. 1997 Description The HB56TW432D is a 4M x 32 dynamic RAM Small Outline Dual In-line Memory Module

604f

Abstract: 1604f 5V72A3204
Contextual Info: "KYUHDAI -• TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 72Pin SIMM H Y M 532224A W -. - . 2Mx32 H Y M 532224C W - - 2Mx32

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

edo ram 4Mx16

Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

HY5116400BT

Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC

Contextual Info: DRAM PART NUMBERING HY 51 X XX XXX X XX XX - XX HYUNDAI SPEED Memory Products 45 45ns 50 50ns 60 60ns 70 70ns PRODUCT GROUP 51 : DRAM PACKAGE PROCESS & POWER SUPPLY BLANK : CMOS, 5.0V J 300mit SOJ V : CMOS, 3.3V JC 400mit SOJ T 300mil TSOP-II TC 400mil TSOP-il

TBST SYSTEMS

Contextual Info: MITSUBISHI LSIs SDRAM Rev. 0.0 M5M4V4S40DTP-8, -10, -12 J u n e ‘98 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION The M5M4V4S40DTP is a 2-bank x 131,072-word x 16-bit