HM51 Search Results

HB56A140BR

Contextual Info: HB56A140BR Series 1,048,576-word x 40-bit High Density Dynamic RAM Module The HB56A140BR is a 1M × 40 dynamic RAM module, mounted 10 pieces of 4-Mbit DRAM HM514400BS/BLS/CS/CLS sealed in SOJ package. An outline of the HB56A140BR is 72pin single in-line package. Therefore, the

HB56A169

Contextual Info: HB56A169 Series 16,777,216-word x 9-bit High Density Dynamic RAM Module The HB56A169 is a 16 M × 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100AS sealed in SOJ package. An outline of the HB56A169 is 30-pin single in-line package. Therefore, the HB56A169 makes high

Contextual Info: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

Contextual Info: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/

Contextual Info: HB56T132D Series 1,048,576-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T132D is a 1 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 4Mbit DRAM (HM514400CTT/CLTT) sealed in TSOP package. An outline of the HB56T132D is 72-pin Zig

Contextual Info: SIE MM^baOB 001ÖÖ57 ISS • H I T 2 D HM5116100 Series Preliminary 16,777,216-Word x 1-Bit Dynamic Random Access Memory ■ H IT A C H I/ d e s c r ip t io n LO G IC/ARR AYS/flEM HM5116100J Senes The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word x

Contextual Info: HB56H232 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM HM5118165AJ sealed in SOJ package. The HB56H232 offers Extended Data Out (EDO) Page Mode as a high speed access time.

Contextual Info: HB56UW865DB-A Series 8388608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-828A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW865DB-A Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. 0 . DIMM), mounted 8 pieces of 64-Mbit DRAM (HM5165805A/AL) sealed in TSOP package and 1

HM514170CLJ8

Abstract: HM514170CLJ-8 HM514170CJ7
Contextual Info: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process

HM514280AJ7

Abstract: HM514280AJ-7 hm514280
Contextual Info: blE I • m lb 203 0023114 535 ■ H IT S HM514280A/AL Series -HM51S4280A/AL Series 262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ The Hitachi HM514280A/AL are CMOS dynamic RA M o rg an ized as 2 6 2 ,1 4 4 -w o rd x 18-bit. HM 514280A/AL have realized higher density,

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: HB56TW432D Series, HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-732A Z Rev. 1.0 Feb. 27, 1997 Description The HB56TW432D is a 4M x 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit DRAM (HM51W16400) sealed in TSOP package. The

Contextual Info: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin­

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers

Contextual Info: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24,1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM 51E D MM 1 b 5Q 3 OOlflS?«? fl73 • H I T S HM514400A Series HM514400AL Series Low P ow er Version HM514400ASL Series Super Low Pow er Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/AU/ALSJ Series

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56SW832DZJ Series 32 MB EDO DRAM S.O.DIMM 8-Mword x 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M × 4 Components ADE-203-790B (Z) Rev.2.0 Nov. 1997 Description The HB56SW832DZJ is a 8M × 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W17405) sealed in TCP package. An outline

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56SW864DBK Series 8,338,608-word x 64-bit High Density Dynamic RAM Module ADE-203-777A Z Rev.1.0 Jun. 18, 1997 Description The HB56SW864DBK is a 8M × 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 32 pieces of 16-Mbit DRAM (HM51W16405) sealed in TCP package and 1 piece

Hitachi DSA00164

Contextual Info: HM514270C Series HM51S4270C Series 262,144-word x 16-bit Dynamic Random Access Memory ADE-203-365A Z Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51(S)4270C are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4270C have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process

Hitachi DSA00164

Contextual Info: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended