489AA Search Results

489AA

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 10 PIN FLIP−CHIP CASE 489AA−01 ISSUE A DATE 04 MAY 2004 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS.

Contextual Info: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring

485AG

Contextual Info: CHAPTER 2 Case Outlines and Package Dimensions http://onsemi.com 421 CASE OUTLINES AND PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE M 1 DATE 07 JUN 2004 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.

NLAS4717EPMTR2G

Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

power tmos

Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Contextual Info: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.

555C

Abstract: MAX4685 NLAS4685 T-014 489AA
Contextual Info: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

555C

Abstract: MAX4685 NLAS4685 NLAS4685FCT1 NLAS4685FCT1G
Contextual Info: NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.8 W, for the Normally Closed (NC) switch and

MAX4717

Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.

MAX4717

Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

NLAS4684MR2G

Abstract: 555C DFN10 MAX4684 NLAS4684 NLAS4684MR2
Contextual Info: NLAS4684 Ultra-Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

MAX4717

Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

A1468-4

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

4717EP

Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

555C

Abstract: MAX4684 NLAS4684 NLAS4684FCT1 NLAS4684FCT1G 4684
Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and

Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.

Contextual Info: NLAS4684 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4684 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, for the Normally Closed (NC) switch, and