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    4717EP Search Results

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    4717EP Price and Stock

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    Rochester Electronics LLC NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
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    DigiKey NLAS4717EPMTR2G Bulk 610,325 438
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    Rochester Electronics LLC NLAS4717EPFCT1G

    SPDT, 2 FUNC, 1 CHANNEL, CMOS, P
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    DigiKey NLAS4717EPFCT1G Bulk 21,965 300
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    Rochester Electronics LLC SLAS4717EPMTR2G

    ANALOG SWITCH
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    DigiKey SLAS4717EPMTR2G Bulk 9,000 1,069
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    Rochester Electronics LLC MC34717EPR2

    MC34717 - Switch-Mode Power Supp
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    DigiKey MC34717EPR2 Bulk 243 59
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    NXP Semiconductors MC34717EP

    IC REG CONV DDR 2OUT 26QFN
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    DigiKey MC34717EP Tray
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    Rochester Electronics MC34717EP 1 1
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    Chip Stock MC34717EP 6,335
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    Win Source Electronics MC34717EP 4,835
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    4717EP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP PDF

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D PDF

    4717EP

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D PDF