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    4717EP Search Results

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    FLIP ELECTRONICS NLAS4717EPFCT1G

    IC SWITCH DUAL SPDT 10MICROBUMP
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    DigiKey NLAS4717EPFCT1G Tape & Reel 45,000 1,000
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    Rochester Electronics LLC NLAS4717EPFCT1G

    SPDT, 2 FUNC, 1 CHANNEL, CMOS, P
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    DigiKey NLAS4717EPFCT1G Bulk 21,965
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    NXP Semiconductors MC34717EP

    IC REG CONV DDR 2OUT 26QFN
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    DigiKey MC34717EP Tray
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    Rochester Electronics MC34717EP 1 1
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    NXP Semiconductors MC34717EPR2

    IC REG CONV DDR 2OUT 26QFN
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    Newark MC34717EPR2 Bulk 5,000
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    Rochester Electronics MC34717EPR2 243 1
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    NXP Semiconductors KIT34717EPEVBE

    EVAL BOARD FOR MC34717
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    DigiKey KIT34717EPEVBE Box 1
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    Avnet Americas KIT34717EPEVBE Box 1
    • 1 $117.46
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    Mouser Electronics KIT34717EPEVBE
    • 1 $120.04
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    Newark KIT34717EPEVBE Bulk 1
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    Find more 4717EP price and stock on Findchips.com

    4717EP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP PDF

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G PDF

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D PDF

    4717EP

    Contextual Info: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D PDF