NLAS4717FCT1G Search Results
NLAS4717FCT1G Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NLAS4717FCT1G |
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4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 78.34KB | 10 | ||
| NLAS4717FCT1G |
|
4.5 ohm High Bandwidth, Dual SPDT Analog Switch | Original | 94.94KB | 10 |
NLAS4717FCT1G Price and Stock
onsemi NLAS4717FCT1GIC SW SPDTX2 3.5OHM 10MICROBUMP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NLAS4717FCT1G | Reel |
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NLAS4717FCT1G | 29,800 | 605 |
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NLAS4717FCT1G | 3,000 |
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NLAS4717FCT1G | 563,058 | 1 |
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NLAS4717FCT1G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring |
Original |
NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10 | |
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Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
|
Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G | |
|
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
|
Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G | |
|
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
|
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D | |
|
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D | |
MAX4717
Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2
|
Original |
NLAS4717 NLAS4717 Micro-10: Microbump-10 489AA Micro-10 NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 | |
|
Contextual Info: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V. |
Original |
NLAS4717 Micro10: NLAS4717/D |